Buffer Cache Management for Combined MLC and SLC Flash Memories Using both Volatile and Nonvolatile RAMs

Park, Junseok; Bahn, Hyokyung; Koh, Kern

doi:10.1109/rtcsa.2009.32

Cited by 5 publications

(2 citation statements)

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“…Unlike hard disks, however, NAND flash memory has asymmetrical read and write costs. In NAND flash memory, servicing a write I/O request takes 3-10 times longer than servicing a read I/O request for the same I/O size as shown in Table 1 [12,13].…”

Section: B Page Replacement For Flash Memorymentioning

confidence: 99%

“…However they do not consider the different I/O costs of read and write operations in NAND flash memory when replacing clean and dirty pages. Dirty pages need to be swapped out or flushed to NAND flash memory before their eviction, and this incurs a write I/O that is about 3-10 times slower than a read I/O [10,12,13]. Note that a dirty page is one that has been modified during its residence in the memory, while a clean page is one that has not been changed.…”

Section: Introductionmentioning

confidence: 99%

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Page Replacement for Write References in NAND Flash Based Virtual Memory Systems

Lee¹,

Bahn²,

Shin

2014

Journal of Computing Science and Engineering

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Contemporary embedded systems often use NAND flash memory instead of hard disks as their swap space of virtual memory. Since the read/write characteristics of NAND flash memory are very different from those of hard disks, an efficient page replacement algorithm is needed for this environment. Our analysis shows that temporal locality is dominant in virtual memory references but that is not the case for write references, when the read and write references are monitored separately. Based on this observation, we present a new page replacement algorithm that uses different strategies for read and write operations in predicting the re-reference likelihood of pages. For read operations, only temporal locality is used; but for write operations, both write frequency and temporal locality are used. The algorithm logically partitions the memory space into read and write areas to keep track of their reference patterns precisely, and then dynamically adjusts their size based on their reference patterns and I/O costs. Without requiring any external parameter to tune, the proposed algorithm outperforms CLOCK, CAR, and CFLRU by 20%-66%. It also supports optimized implementations for virtual memory systems.

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Section: B Page Replacement For Flash Memorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%