BST thin films grown in a multiwafer MOCVD reactor

Fitsilis, Fotios; Regnery, S.; Ehrhart, P.; Waser, Rainer; Schienle, F.; Schumacher, M.; Dauelsberg, M.; Strzyżewski, P.; Juergensen, H.

doi:10.1016/s0955-2219(01)00061-9

Cited by 19 publications

(15 citation statements)

References 7 publications

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“…64,65 Both reactor designs are theoretically scalable to any size wafer platter. Uniform deposition of BST films has been demonstrated in both planetary 66 and high speed rotating disk MOCVD reactors. 67 MOCVD processes for complex oxide films are highly dependent on the precursor chemicals.…”

Section: E Mocvdmentioning

confidence: 99%

“…Efficient and reliable liquid delivery and flash evaporation systems have been developed for commercial MOCVD reactors and demonstrated for deposition of uniform BST films on large wafers. 66,68 For MOCVD of complex oxides, such as BST, molar incorporation rates for the individual metal species are precursor and process dependent. The typical procedure for initial process development is to deposit several films and determine their actual composition using a technique such as Rutherford Backscattering Spectroscopy (RBS).…”

Section: E Mocvdmentioning

confidence: 99%

“…The composition of BST films has been shown to vary with substrate temperature during MOCVD, particularly with regard to the (Ba þ Sr)/Ti ratio. 66,68 Within these constraints, initial MOCVD process development and subsequent process control can be done reliably and effectively. Once this calibration is established, MOCVD can easily produce compositionally graded films of nearly any profile.…”

Section: E Mocvdmentioning

confidence: 99%

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Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

Subramanyam¹,

Cole²,

Sun³

et al. 2013

Journal of Applied Physics

145

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There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges. V C 2013 AIP Publishing LLC.

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Section: E Mocvdmentioning

confidence: 99%

Section: E Mocvdmentioning

confidence: 99%

Section: E Mocvdmentioning

confidence: 99%

See 1 more Smart Citation

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

Subramanyam¹,

Cole²,

Sun³

et al. 2013

Journal of Applied Physics

145

View full text Add to dashboard Cite

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“…The deposition temperatures were varied 500-700°C. The process conditions are summarized in Table 1 [3,4].…”

Section: Mocvd Thin Filmsmentioning

confidence: 99%

XRF and SIMS/SNMS analyses of BaxSr1−xTiO3 dielectrics

2003

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The development of analytical tools and procedures for process control is a prerequisite for the integration of high permittivity and/or ferroelectric materials in CMOS devices. The thickness and composition of perovskite oxide films were determined by wavelength dispersive X-ray fluorescence analysis (XRF) with special emphasis on the ratio of the group-II elements to the Ti content, and a precision of 0.5% was achieved for a typical film thickness of 20-30 nm. Secondary ion mass spectrometry (SIMS) and sputtered neutrals mass spectrometry (SNMS) was used for depth profiling to determine film homogeneity and elemental interdiffusion at hetero-interfaces. Examples are given for Ba(x)Sr(1-x)TiO(3) and SrTiO(x) thin films which were grown in a prototype MOCVD production tool. No interdiffusion was observed for films grown at 600 degrees C on Pt electrodes in contrast to films grown directly on Si.

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“…This thin film can be produced with various methods such as metalorganic chemical vapor deposition (MOCVD) [13], sol-gel [14][15][16][17], atomic laser deposition (ALD) [18], hydrothermal synthesis [19], metal organic decomposition (MOD) [20,21], and chemical solution deposition (CSD) [22][23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Enhancement of Photon Absorption onBaxSr1-xTiO3Thin-Fi

Nuayi

Alatas

Irzaman

et al. 2014

International Journal of Optics

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Enhancement of photon absorption on barium strontium titanate (Ba Sr 1− TiO 3 ) thin-film semiconductor for mole fraction = 0.25, 0.35, 0.45, and 0.55 using one-dimensional photonic crystal with defect was investigated experimentally. The thin film was grown on transparent conductive oxide (TCO) substrate using chemical solution deposition method and annealed at 500 ∘ C for 15 hours with increasing rate of 1.6 ∘ C/min. From optical characterization in visible spectrum it was found that the average absorption percentages are 92.04%, 83.55%, 91.16%, and 80.12%, respectively. The BST thin film with embedded photonic crystal exhibited a relatively significant enhancement on photon absorption, with increasing value of 3.96%, 7.07%, 3.04%, and 13.33% for the respective mole fraction and demonstrating absorbance characteristic with flat feature. In addition, we also discuss the thin-film properties of attenuation constant and electrical conductivity.

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BST thin films grown in a multiwafer MOCVD reactor

Cited by 19 publications

References 7 publications

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

XRF and SIMS/SNMS analyses of BaxSr1−xTiO3 dielectrics

Enhancement of Photon Absorption onBaxSr1-xTiO3Thin-Fi

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