Brush Scrubbing for Post-CMP Cleaning

Sun, Tian; Han, Zhenxing; Keswani, Manish

doi:10.1016/b978-0-323-43157-6.00004-5

Cited by 4 publications

(5 citation statements)

References 35 publications

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“…Processes for Advanced Technology Nodes performance of IC devices (6)(7)(8)(9)(10). Additionally, as device sizes continue to miniaturize it is imperative to develop processes that provide a more amiable approach to eliminate the proliferation of secondary defectivity (11).…”

Section: Design Of "Low Stress" Post-chemical Mechanical Planarizatio...mentioning

confidence: 99%

Design of “Low Stress” Post-CMP Cleaning Processes for Advanced Technology Nodes

et al. 2022

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The Chemical Mechanical Planarization (CMP) process can cause various defects, and they can be classified as mechanical (i.e., scratching), chemical (i.e., corrosion), or physiochemical (i.e., adsorbed contaminants) according to the mechanism of formation. Traditionally, a contact cleaning method involving a poly-vinyl alcohol (PVA) brush is used to transfer cleaning chemistry to the substrate of interest as well as provide the necessary mechanical energy for defect removal. While this process is effective in contaminant removal its reliance on shear forces can induce secondary defect modes, such as scratching. To minimize the aforementioned induced defectivity during contact p-CMP processes, the implementation of non-contact modalities has become of the utmost importance. This work will focus on the rationale design of p-CMP cleaning systems for emerging materials such as SiC, carbon-doped oxides, and metals. “Soft” cleaning chemistry structure (i.e., shape and charge), and processes play a critical role in cleaning efficacy under low stress conditions.

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Section: Design Of "Low Stress" Post-chemical Mechanical Planarizatio...mentioning

confidence: 99%

Design of “Low Stress” Post-CMP Cleaning Processes for Advanced Technology Nodes

et al. 2022

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“…As a result, it increases the likelihood of residue dropping onto the wafer surface. 48,49 Still, it is to be noted that uniform dispensing of liquid is necessary in the vertical modules. As reported in the literature, the vertical module gives better cleaning efficiency as compared to the horizontal module.…”

Section: Post-cmp Cleaning Process and Equipmentmentioning

confidence: 99%

“…• The brush contact with the wafer has a huge impact on attaining uniform cleaning and preventing cross-contamination. Hosaka et al 49 reported that cross-contamination could be avoided by preventing press type (Pr) contact deformation patterns. This is possible by improvising the brush shape or nodule or altering the rotation speed.…”

Section: Post-cmp Cleaning Process and Equipmentmentioning

confidence: 99%

“…122,123 • For removing silica particles from the oxide/nitride, post-CMP cleaning is done by brush scrubbing either with SC1 or NH 4 OH. 49 Performing megasonic cleaning prior to brush scrubbing helps minimize brush particle loading and remove small-sized particles. 56 The metallic contaminants are removed by HF etching, which removes the complete SiO 2 thin layer comprising metal contaminants from the wafer surface.…”

Section: Application-based Post-cmp Cleaningmentioning

confidence: 99%

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Review—Post-Chemical Mechanical Planarization Cleaning Technology

Hazarika,

Gupta,

Rajaraman

2023

ECS J. Solid State Sci. Technol.

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Chemical mechanical planarization (CMP), a commonly employed process for attaining local and global planarization in integrated circuits fabrication, leaves contaminants and defects on the surface polished. Due to the miniaturization of devices, new materials/ processes for the fabrication of IC circuits are considered, introducing new post-CMP issues. As such, understanding of post-CMP cleaning process is critical to choose an appropriate method for the given material. Here, the types of contaminants and defects generated during the post-CMP process and the issues related to it are discussed. The different physical and chemical cleaning methods employed in the post-CMP cleaning process to eradicate these defects are elucidated.In particular, the PVA brushing method, which is currently preferred, is elaborated upon in detail. The various chemistries, including the newly suggested ones in recent years for cleaning different substrates, are summarized. The post-CMP cleaning methods for various materials such as Cu, Al, W, Co, Ru, InGaAs, Ge, and SiO2 are mainly addressed here. This review also provides the direction of progress for the post-CMP cleaning process in terms of evolution of new techniques and chemistries for the next generation of materials.

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“…Moumen and Busnaina [Moumen and Busnaina (2001)], Philipossian et [Philipossian al. and Mustapha (2003)], Huang et al [Huang, Guo, Lu et al (2011)], Sun et al [Sun, Zhuang, Li et al (2012); Sun, Han and Keswani (2017)] have dealt with brushes for post-CMP (Chemical Mechanical Planarization) cleaning. Shehri et al [Shehri, Parrott, Carrasco et al (2016)] and Parrott et al [Parrott, Carrasco Zanini, Shehri et al (2018)] have studied solar panel cleaning.…”

Section: Introductionmentioning

confidence: 99%

Numerical Analysis of Tilted Cutting and F128 Brushes

Vanegas-Useche¹,

Wahab²,

Parker³

2019

Computer Modeling in Engineering &Amp; Sciences

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Road sweeping is an essential service that has to be conducted for public health, as well as aesthetic purposes. In many countries, sweeping vehicles are used for this activity. They usually comprise a gutter brush that sweeps the debris that is located in the road gutter. This work studies the performance of two kinds of gutter brushes: a cutting brush and a flicking (F128) brush. This is carried out by means of a 3-D dynamic, nonlinear Finite Element (FE) brush model developed by the authors. In this model, inertia forces are applied to the bristle, and its clamped end is fixed. Consequently, the surface (road) is rotated, translated, and raised. Bristle-road interaction is modelled as flexible-to-rigid contact. In particular, the aim of this article is to compare the performance of a conventional brush and a brush rotating at variable speed. As brushes normally work tilted, FE analyses are carried out for tilted cutting and F128 brushes, rotating at speeds that fluctuate at different frequencies. It is concluded that brush oscillations have a significant effect on bristle tip velocities and bristle-road forces. Also, at certain frequencies, oscillations seem to improve sweeping performance of the F128 brush. However, they do not appear to improve significantly the performance of the cutting brush.

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Brush Scrubbing for Post-CMP Cleaning

Cited by 4 publications

References 35 publications

Design of “Low Stress” Post-CMP Cleaning Processes for Advanced Technology Nodes

Design of “Low Stress” Post-CMP Cleaning Processes for Advanced Technology Nodes

Review—Post-Chemical Mechanical Planarization Cleaning Technology

Numerical Analysis of Tilted Cutting and F128 Brushes

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