Broken-gap type-III band alignment in monolayer halide perovskite/antiperovskite oxide van der Waals heterojunctions

Zhong, Hongxia; Xu, Zhengyu; Feng, Chunbao; Wan, Xiaoying; Li, Jiahui; Wang, Hai; Tang, Gang

doi:10.1039/d3nr00676j

Cited by 3 publications

(2 citation statements)

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“…The BTBT effect improves the tunneling efficiency and induces negative differential resistance (NDR) effect 28 . Hence, type-III heterostructures are favorable for application in tunneling field-effect transistor and photo-detector 29 . Due to the diversified application prospects of the vdW heterojunctions, intensive research has been carried out in this field.…”

Section: Introductionmentioning

confidence: 99%

A resilient type-III broken gap Ga2O3/SiC van der Waals heterogeneous bilayer with band-to-band tunneling effect and tunable electronic property

Ferdous,

Islam,

Park

2024

Sci Rep

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The potential of van der Waals (vdW) heterostructure to incorporate the outstanding features of stacked materials to meet a variety of application requirements has drawn considerable attention. Due to the unique quantum tunneling mechanisms, a type-III broken-gap obtained from vdW heterostructure is a promising design strategy for tunneling field-effect transistors. Herein, a unique Ga2O3/SiC vdW bilayer heterostructure with inherent type-III broken gap band alignment has been revealed through first-principles calculation. The underlying physical mechanism to form the broken gap band alignment is thoroughly studied. Due to the overlapping band structures, a tunneling window of 0.609 eV has been created, which enables the charges to tunnel from the VBM of the SiC layer to the CBM of the Ga2O3 layer and fulfills the required condition for band-to-band tunneling. External electric field and strain can be applied to tailor the electronic behavior of the bilayer heterostructure. Positive external electric field and compressive vertical strain enlarge the tunneling window and enhance the band-to-band tunneling (BTBT) scheme while negative electric field and tensile vertical strain shorten the BTBT window. Under external electric field as well as vertical and biaxial strain, the Ga2O3/SiC vdW hetero-bilayer maintains the type-III band alignment, revealing its capability to tolerate the external electric field and strain with resilience. All these results provide a compelling platform of the Ga2O3/SiC vdW bilayer to design high performance tunneling field effect transistor.

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Section: Introductionmentioning

confidence: 99%

A resilient type-III broken gap Ga2O3/SiC van der Waals heterogeneous bilayer with band-to-band tunneling effect and tunable electronic property

Ferdous,

Islam,

Park

2024

Sci Rep

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“…Due to the position of the valence band maximum (VBM) in the heterojunction being higher than that of the conduction band minimum (CBM), the electrons in the VBM of one layer can tunnel directly to the CBM of the other layer. [8][9][10] This process is known as band-to-band tunneling (BTBT), which can improve tunneling efficiency and induce the negative differential resistance (NDR) effect. Therefore, the broken-gap heterojunction has a particular benefit in tunneling field effect transistors (TFETs) and photodetectors.…”

Section: Introductionmentioning

confidence: 99%

A novel broken-gap chemical-bonded SiC/Ti₂CO₂ heterojunction with band to band tunneling: first-principles investigation

Dai,

Sheng,

Zhou

et al. 2023

Phys. Chem. Chem. Phys.

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Robust type-III C3N/Ga2O3 van der Waals heterostructures

Wu,

Liu,

et al. 2024

Vacuum

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Broken-gap type-III band alignment in monolayer halide perovskite/antiperovskite oxide van der Waals heterojunctions

Abstract: The integration of halide perovskites with other functional materials provides a new platform for applications beyond photovoltaics, which has been realized in experiments. Here, through first-principles methods, we explore the...

Cited by 3 publications

References 64 publications

A resilient type-III broken gap Ga2O3/SiC van der Waals heterogeneous bilayer with band-to-band tunneling effect and tunable electronic property

A resilient type-III broken gap Ga2O3/SiC van der Waals heterogeneous bilayer with band-to-band tunneling effect and tunable electronic property

A novel broken-gap chemical-bonded SiC/Ti₂CO₂ heterojunction with band to band tunneling: first-principles investigation

Robust type-III C3N/Ga2O3 van der Waals heterostructures

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Broken-gap type-III band alignment in monolayer halide perovskite/antiperovskite oxide van der Waals heterojunctions

Abstract: The integration of halide perovskites with other functional materials provides a new platform for applications beyond photovoltaics, which has been realized in experiments. Here, through first-principles methods, we explore the...

Cited by 3 publications

References 64 publications

A resilient type-III broken gap Ga2O3/SiC van der Waals heterogeneous bilayer with band-to-band tunneling effect and tunable electronic property

A resilient type-III broken gap Ga2O3/SiC van der Waals heterogeneous bilayer with band-to-band tunneling effect and tunable electronic property

A novel broken-gap chemical-bonded SiC/Ti2CO2 heterojunction with band to band tunneling: first-principles investigation

Robust type-III C3N/Ga2O3 van der Waals heterostructures

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A novel broken-gap chemical-bonded SiC/Ti₂CO₂ heterojunction with band to band tunneling: first-principles investigation