2006
DOI: 10.1364/josab.23.002494
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Broadly tunable laser operation near 2μm in a locally disordered crystal of Tm^3+-doped NaGd(WO_4)_2

Abstract: A single crystal of NaGd(WO 4) 2 with disordered structure was grown by the Czochralski method with 5 mol % of Tm 3+-doping in the melt. This crystal host belongs to the I 4 tetragonal space group. The Tm 3+ optical absorption and emission spectroscopy revealed strong polarization dependence in accordance with the S 4 local site symmetry of the uniaxial host. The Stark energy levels of Tm 3+ in this host were determined from 5 K optical absorption and photoluminescence measurements. The 300 K lifetime of the u… Show more

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Cited by 67 publications
(49 citation statements)
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“…The tuning range was similar in Tm:Yb:KYW [27]. For other well-known hosts such as YLF, a tuning range of 162 nm is possible in the cw mode [28] and NGdW with 212 nm tuning range [21].…”
Section: +mentioning
confidence: 69%
See 1 more Smart Citation
“…The tuning range was similar in Tm:Yb:KYW [27]. For other well-known hosts such as YLF, a tuning range of 162 nm is possible in the cw mode [28] and NGdW with 212 nm tuning range [21].…”
Section: +mentioning
confidence: 69%
“…These peaks are suitable for diode-pumping and their σ a are slightly higher than those of Tm:KGd(WO 4 ) 2 (KGdW) [18], Tm:KY(WO 4 ) 2 (KYW) [19] and Tm:KYb(WO 4 ) 2 (KYbW) [20] and almost twice as the high as that the disordered tungstate Tm:NaGd(WO 4 ) 2 (NGdW) [21,22].…”
Section: × 10mentioning
confidence: 92%
“…In particular, efficient laser operation with Nd 3þ [6], Yb 3þ [7,8], Tm 3þ [9,10] and Ho 3þ ions [11] has been reported. These materials have an important advantage as compared with their monoclinic counterparts where Na þ is replaced by K þ , i.e.…”
Section: Introductionmentioning
confidence: 99%
“…To obtain the ∼2.0 m laser, Tm 3+ -doped media become very promising because the 3 F 4 → 3 H 6 transition of Tm 3+ ions is an effective channel [4] and the broad emission band of the transition also makes tunable laser operation possible [5]. In addition, the broad and strong absorption band of the 3 H 6 → 3 H 4 transition around 795 nm is suitable for the AlGaAs diode laser pumping [6]. Another attractive character of Tm 3+ ions is the high efficiency for the ∼795 nm diode pumping because in principle one pump photon can excite two ions into the 3 F 4 upper laser level through cross-relaxation between Tm 3+ ions [7,8].…”
Section: Introductionmentioning
confidence: 99%