Broadband spectroscopic lidar for SWIR/MWIR detection of gaseous pollutants in air

Lambert-Girard, Simon; Hô, Nicolas; Bourliaguet, Bruno; Lemieux, Dany; Piché, Michel; Babin, F.

doi:10.1117/12.974759

Cited by 3 publications

(1 citation statement)

References 13 publications

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“…The detection of broadband light, which extends beyond the visible light (VL) range and includes the short‐wave infrared (SWIR, 1.1–3 µm) spectrum, has become an area of significant interest due to its potential applications in various industries such as surveillance, pollution measurement, biological and medical imaging, and machine vision. [ 1–3 ] Semiconductor alloys, including HgCdTe, InGaAs, and InSb, have been dominant in the commercialized infrared (IR) detector market for many years. This is because of their ability to control bandgap based on their composition, high optical absorption coefficient, and high quantum efficiency in the IR region.…”

Section: Introductionmentioning

confidence: 99%

Broadband Van‐der‐Waals Photodetector Driven by Ferroelectric Polarization

Kim,

Lee,

et al. 2023

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The potential for various future industrial applications has made broadband photodetectors beyond visible light an area of great interest. Although most 2D van‐der‐Waals (vdW) semiconductors have a relatively large energy bandgap (>1.2 eV), which limits their use in short‐wave infrared detection, they have recently been considered as a replacement for ternary alloys in high‐performance photodetectors due to their strong light‐matter interaction. In this study, a ferroelectric gating ReS2/WSe2 vdW heterojunction‐channel photodetector is presented that successfully achieves broadband light detection (>1300 nm, expandable up to 2700 nm). The staggered type‐II bandgap alignment creates an interlayer gap of 0.46 eV between the valence band maximum (VBMAX) of WSe2 and the conduction band minimum (CBMIN) of ReS2. Especially, the control of poly(vinylidene fluoride‐trifluoroethylene) (P(VDF‐TrFE)) ferroelectric dipole polarity for a specific wavelength allows a high photoresponsivity of up to 6.9 × 103 A W−1 and a low dark current below 0.26 nA under the laser illumination with a wavelength of 405 nm in P‐up mode. The achieved high photoresponsivity, low dark current, and full‐range near infrared (NIR) detection capability open the door for next‐generation photodetectors beyond traditional ternary alloy photodetectors.

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Section: Introductionmentioning

confidence: 99%

Broadband Van‐der‐Waals Photodetector Driven by Ferroelectric Polarization

Kim,

Lee,

et al. 2023

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Interband cascade light-emitting diodes grown on silicon substrates using GaSb buffer layer

Ince,

Frost,

Shima

et al. 2024

Applied Physics Letters

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Interband cascade light-emitting diodes (ICLEDs) offer attractive advantages for infrared applications, which would greatly expand if high-quality growth on silicon substrates could be achieved. This work describes the formation of threading dislocations in ICLEDs grown monolithically on GaSb-on-Silicon wafers. The epitaxial growth is done in two stages: the GaSb-on-Silicon buffer is grown first, followed by the ICLED growth. The buffer growth involves the nucleation of a 10-nm-thick AlSb buffer layer on the silicon surface, followed by the GaSb growth. The AlSb nucleation layer promotes the formation of 90° and 60° interfacial misfit dislocations, resulting in a highly planar morphology for subsequent GaSb growth that is almost 100% relaxed. The resulting GaSb buffer for growth of the ICLED has a threading dislocation density of ∼107/cm2 after ∼3 μm of growth. The fabricated LEDs showed variations in device performance, with some devices demonstrating comparable light–current–voltage curves to those for devices grown on GaSb substrates, while other devices showed somewhat reduced relative performance. Cross-sectional transmission electron microscopy observations of the inferior diodes indicated that the multiplication of threading dislocations in the active region had most likely caused the increased leakage current and lower output power. Enhanced defect filter layers on the GaSb/Si substrates should provide more consistent diode performance and a viable future growth approach for antimonide-based ICLEDs and other infrared devices.

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Enhancements to INO's broadband SWIR/MWIR spectroscopic lidar

et al. 2013

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Recent advances in the INO broadband SWIR/MWIR spectroscopic lidar will be presented. The system is designed for the detection of gaseous pollutants via active infrared differential optical absorption spectroscopy (DOAS). Two distinctive features are a sub-nanosecond PPMgO:LN OPG capable of generating broadband (10 to >100 nm FWHM) and tunable (1.5 to 3.8 µm) SWIR/MWIR light, and an in-house gated MCT-APD focal plane array used in the output plane of a grating spectrograph. The operation consists in closely gating the returns from back-scattering off topographic features, and is thus, for now, a path integrated measurement. All wavelengths are emitted and received simultaneously, for low concentration measurements and DOAS fitting methods are then applied. The OPG approach enables the generation of moderate FWHM continua with high spectral energy density and tunable to absorption features of many molecules. Recent measurements demonstrating a minimum sensitivity of 10 ppm-m for methane around 3.3 µm with ∼ 2 mW average power in less than 10 seconds will be described. Results of enhancements to the laser source using small or large bandwidth seeds constructed from telecom off-the-shelf components indicate that the OPG output spectral energy density can have controllable spectral widths and shapes. It also has a slightly more stable spectral shape from pulse to pulse than without the seed (25 % enhancement). Most importantly, the stabilized output spectra will allow more sensitive measurements.

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Broadband spectroscopic lidar for SWIR/MWIR detection of gaseous pollutants in air

Cited by 3 publications

References 13 publications

Broadband Van‐der‐Waals Photodetector Driven by Ferroelectric Polarization

Broadband Van‐der‐Waals Photodetector Driven by Ferroelectric Polarization

Interband cascade light-emitting diodes grown on silicon substrates using GaSb buffer layer

Enhancements to INO's broadband SWIR/MWIR spectroscopic lidar

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