Broadband scalable model for Si-RF on-chip spiral inductors with substrate eddy current effect

Abstract

A new broadband scalable compact model for on-chip spiral inductor is presented. It includes a substrate network and a high resistive component to accurately capture the substrate eddy current effect, skin and proximity effects at high frequencies. The proposed model shows a good match with the measurement results over a frequency range of up to 20 GHz. An automated parameter extraction and optimization procedure has been developed using equivalent circuit analysis and particle swarm optimization. We achieved good scalability for all model parameters with respect to spiral layout geometry.

Rapid RCLK modeling of on-chip passives and interconnects with efficientKreduction and passivity enforcement

“…To cover conductor skin effect and proximity effects, an adapted network formulation is needed to model the frequency‐dependent nature of conductor resistance [7–9]. In particular, the resistor‐inductor network of Figure 2 is used, which replaces the series L, R elements of Figure 1 with a series L ext and a parallel combination of four L i , R i elements ( i = 1…4).…”