Broadband RF and Microwave Amplifiers

Grebennikov, Andrei; Бабак, Л. И.; Cherkashin, Mikhail

doi:10.1201/b19053

Cited by 32 publications

(10 citation statements)

References 12 publications

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“…The ladder structure of series and parallel 50 Ω transmission lines (TLs) operates as a broadband low-pass filter so that when the TLs values are appropriately determined, an optimum low-loss broadband matching network is realized. This filter is graphically designed based on the method proposed in [15]. The low-pass filter structure for the input (n = 6) matching network using 50 Ω transmission lines is depicted in Fig.…”

Section: Simulation Methodologymentioning

confidence: 99%

Design of Broadband, High-Efficiency, and High-Linearity Gan Hemt Class-J Rf Power Amplifier

Mohadeskasaei¹,

Lin²,

Zhou³

et al. 2017

PIER C

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In this paper, the design of a broadband, high-efficiency, and high-linearity Class-J GaN HEMT RF power amplifier (PA) over 1.6-2.6 GHz is explained. The source impedance is conjugatematched to the input impedance of the device resulted from small signal simulation to make a high-gain power amplifier. The load impedance related to the maximum power added efficiency (PAE) and maximum output power is obtained by pulling the only fundamental and second harmonic components over frequency bandwidth. Thus, not only a high-efficiency PA but also a high-linearity PA is formed. The input and output matching networks are implemented by microstrip transmission lines. The theoretical PA designed is optimized using computer-aided simulations. The fabricated PA provides output power in the range of 38-39.9 dBm with 60%-73% PAE and 15-16.3 dB power gain across the band. The worst measured ACLR1 as the PA is fed by the CDMA signal with 1.2288 MHz bandwidth is at a level of −38.6 dBc. A close agreement between the measured and simulation results is observed due to the use of high-order harmonic balance simulator and high-accuracy implementation procedure.

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Section: Simulation Methodologymentioning

confidence: 99%

Design of Broadband, High-Efficiency, and High-Linearity Gan Hemt Class-J Rf Power Amplifier

Mohadeskasaei¹,

Lin²,

Zhou³

et al. 2017

PIER C

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“…Fig.5 indicated the power amplifier circuit scheme and DC bias circuit used in the design of the power amplifier in this research. In the power amplifier circuit, value of the capacitor (C) can be determined using the following equation [12] L0 and C0 series components are obtained by using the equivalence of microstrip line circuit with 50 Ω impedance to the L0 and C0 series components. The equivalent circuit of the L0 and C0 series components can be seen in Fig.6 [12].…”

Section: G Power Amplifier and DC Bias Circuitmentioning

confidence: 99%

“…By using (12) and (14) the width value (W1) of the microstrip line obtained a value of 3.11 mm. In addition to (12), the width (W1) and length (L2) of the microstrip line can be determined by using Line Calculation ADS, therefore the value of width (W1) and length (L2) of microstrip line are 3.07 mm and 2.62 mm.…”

Section: E Microstrip Line Calculationmentioning

confidence: 99%

Design of L-Band Power Amplifier by Using Microstrip-Based GaAs p-HEMT MMG15241H Transistor

Amiruddin¹,

Syihabuddin²,

Wahyu³

2018

INFOTEL

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The power amplifier which is designed by using BJT (Bipolar Junction Transistor) has a larger power consumption, hence in this research, the FET GaAs p-HEMT MMG15241H is used. The power amplifier designed in this research uses microstrip-based and works at the middle frequency of 1.27 GHz. This research yielded a power amplifier which works at the bandwidth with a range frequency of 1.265 – 1.275 GHz, a gain result of 20.02 dB, and input return loss result of -24.45 dB.

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“…In [13], a typical RFT lumped-element power amplifier (PA) constructed using load-pull measured data of a Mitsubishi LDMoS RD007 was presented. The design spanned the frequency range of 330-530 MHz, with approximately 20 W of output power and 50% power-added efficiency (PAE).…”

Section: Broadband Microwave Circuit Designs Employing Rfts (Istanbulmentioning

confidence: 99%

Microwave Engineering Expertise in Turkey [Around the Globe]

Yarman

Palamutcuoglullari

Kaya³

et al. 2018

IEEE Microwave

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Broadband RF and Microwave Amplifiers

Cited by 32 publications

References 12 publications

Design of Broadband, High-Efficiency, and High-Linearity Gan Hemt Class-J Rf Power Amplifier

Design of Broadband, High-Efficiency, and High-Linearity Gan Hemt Class-J Rf Power Amplifier

Design of L-Band Power Amplifier by Using Microstrip-Based GaAs p-HEMT MMG15241H Transistor

Microwave Engineering Expertise in Turkey [Around the Globe]

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