Broadband Quantum-Dot Infrared Photodetector

Lin, Wei-Hsun; Tseng, Chi-Che; Chao, Kuang-Ping; Kung, Shu-Yen; Lin, Shih‐Yen; Wu, Meng‐Chyi

doi:10.1109/lpt.2010.2048425

Cited by 2 publications

(1 citation statement)

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“…The same trends have been observed in QDIPs, where the intraband absorption is found in a narrow energy range around 50-400 meV, at most. [56][57][58] To illustrate the situation, in Figure 5.41 we show ideal and realistic absorption bands in an IBSC according to the theory and our results in PC and FTIR experiments, respectively. As it can be seen, in the ideal situation derived from the IBSC theory, the three transitions (A to C) have adjacent absorption bands that map the region of maximum intensity of the solar spectrum (modelled as a black body at 6000 K).…”

Section: Chapter 5 Strain Balanced Inas Quantum Dots Stacksmentioning

confidence: 99%

Strain Balanced Epitaxial Stacks of Quantum Dots and Quantum Posts

et al. 2011

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The self assembly of quantum dots by heteroepitaxy of lattice‐mismatched semiconductors is based on elastic energy relaxation, which spontaneously occurs at the growth front when the largest atoms in the crystal cluster together. Because a larger covalent radius is related to weaker bonds, and this is in turn fundamentally related to smaller bandgaps, the formation of quantum dots leads to a confinement potential for electrons and/or holes. This effect has applications ranging from ultralow threshold diode lasers to highly efficient solar cells and usually requires the stacking of multiple quantum dots. The number of layers is limited by the stress accumulated during growth due to the larger covalent radius of the atoms that constitute the quantum dots. This accumulated stress can be relieved by introducing in the epitaxial layers compensating atomic species with a smaller covalent radius, enabling a reduction of spacer layer thickness. In the limit of sub‐nanometer spacer thickness, the quantum dots, which have a tendency to line up vertically, fuse into a quantum post. The current efforts to optimize the properties of strain balanced quantum dot stacks and quantum posts are reviewed.

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Section: Chapter 5 Strain Balanced Inas Quantum Dots Stacksmentioning

confidence: 99%

Strain Balanced Epitaxial Stacks of Quantum Dots and Quantum Posts

et al. 2011

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The Impact of Cap Layers on the Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots

Tian

Huang

Luo

et al. 2012

AMR

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Self-assembled InAs/GaAs quantum dots structures with low temperature and high temperature cap layers are grown by meta-organic chemical vapor deposition. The effects of Indium composition of high temperature InGaAs cap layer on the structural and optical properties of quantum dots are investigated by the atomic force microscopy and photoluminescence. Emission peak wavelengths shift from 1218 nm to 1321 nm when the Indium composition of high temperature InGaAs cap layer increase form 0 to 0.17.

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Broadband Quantum-Dot Infrared Photodetector

Cited by 2 publications

References 11 publications

Strain Balanced Epitaxial Stacks of Quantum Dots and Quantum Posts

Strain Balanced Epitaxial Stacks of Quantum Dots and Quantum Posts

The Impact of Cap Layers on the Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots

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