Broadband photoelectric tunable quantum dot based resistive random access memory

Abstract

Ultra-stable broadband photoelectric tunable PbS QD based RRAM device with flexibility and multilevel data storage ability was demonstrated.

2D Heterostructure of Bi2O2Se/Bi2SeOx Nanosheet for Resistive Random Access Memory

“…With the rapid development of modern information technology, the continuous enhancement of data processing capability and the deeper exploration of big data, cloud computing and other related information technology, there are much more demanding requirements for memory devices in performance, scalability, reliability and durable. [1][2][3] Resistive random access memory (RRAM), has the characteristics of high density, fast switching speed, high scalability, low power consumption, multilevel storage ability, and is also compatibility with traditional complementary metal-oxide-semiconductor technology. With these excellent characteristics, RRAM has been attracting more and more research interest in the field of non-volatile data storage, logic operations and neuromorphic computing.…”

Light-activated Multilevel Resistive Switching Storage in Pt/Cs2AgBiBr6/ITO/Glass Devices

“…The bipolar RS behavior in different memories can be normally explained by three types of mechanisms, namely the electrochemical metallization mechanism (ECM), the valence variation mechanism (VCM) and the thermochemical mechanism (TCM) [ 12 , 29 ]. In the ECM model, the RS switching behavior is based on the formation or rupture of metallic conductive filaments formed by active metal atoms within the medium layer [ 12 , 30 ]. However, the inert Pt metal was applied to be as the electrode of the CABB-based memory device in our work; thus, we speculated that the VCM model was primarily contributed to the RS behavior in the Pt/CABB/ITO/glass device.…”

“…In the positive region, the fitting slope of log( I )–log( V ) curve is approximately 1 in the voltage range of 0 and 0.3 V, the I – V relationship obeys the Ohm’s law. With the positive voltage increasing, the slopes of the fitted lines are approximately 2 and 10 in the voltage range of 0.3 V and 1.1 V, respectively, indicating that the SCLC model dominates the conductive process [ 12 , 30 , 31 ]. With the positive bias further increasing in the range of 1.1 V and 1.9 V, the current decreases obviously, indicating the so-called negative differential resistance (NDR) appearing [ 32 ].…”

Nanostructured perovskites for nonvolatile memory devices

“…For instance, CsPbBr 3 , [54][55][56][57] Cs 4 PbBr 6 , 58,59 CsPbI 3 , 60,61 CH 3 NH 3 PbI 3 , [62][63][64] and CH 3 NH 3 PbBr 3 65,66 are advantageous in constructing photonic storage and in-sensor devices compared to other materials, such as binary oxides, [67][68][69][70] graphene, [71][72][73] polymers, 74,75 chalcogenides, etc. 76,77 So far, although numerous electronic devices utilizing perovskite materials have been adopted to implement the storage and neuromorphic computing functions, there are few summaries concerning the effects of the dimensionality of perovskite materials on the performance of electronics. It is well known that some special properties emerge when the morphology of materials changes from bulk to nanoscale structures.…”