Broadband Parallel Doherty Power Amplifier in GaN for 5G Applications

Bhardwaj, Sumit; Kitchen, Jennifer

doi:10.1109/pawr.2019.8708727

Cited by 20 publications

(13 citation statements)

References 6 publications

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“…Compare to other published DPA solutions using GaN devices in recent years, this design presents a wide band, extend OBO, and high saturation power in symmetrical DPAs, Table 1 summarizes the performance of the designed DPA and other states of the art PAs. This designed DPA has a 100 MHz wider bandwidth than the simulation result given by Bhardwaj and Kitchen, 11 200 MHz wider bandwidth, larger OBO, more than 4.5 dB higher peak power, and 4% better OBO drain efficiency than Kosaka et al, 12 about 2 dB higher peak power compared to Lv et al, 13 and 100 MHz wider bandwidth, higher peak power compared with the simulation result of Roychowdhury and Kitchen 14 …”

Section: Resultsmentioning

confidence: 65%

A novel compact asymmetric Doherty PA design using symmetric transistors

Jin

Cheng

Wang

et al. 2022

Micro & Optical Tech Letters

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A novel 7.2 dB output power back off Doherty power amplifier (DPA) based on asymmetrical load is proposed using two same transistors in this paper. To get maximum efficiency at back-off output power and the largest saturate output power level simultaneously, the carrier power amplifier (PA) is matched to the maximum efficiency region when peaking PA is almost off, and both of the two PAs are matched to maximum power region to get largest output power. According to the proposed design methodology, high efficiency at back-off power and high peak power DPA is designed and fabricated with two Cree's GaN HEMT CGH40010F devices. Measurements results show that the saturated output power of the DPA is over 44.5 dBm, the drain efficiency when 7.2 dB output power back off and saturate power are above 42% and 53%, respectively, in the range of 3.4-3.8 GHz. Meanwhile, better than −47.8 dBc adjacent channel leak power ratio can be achieved with digital predistortion under 20 MHz LTE signal testing at 3.4 GHz, the final design size is only 14 × 12 cm 2 . K E Y W O R D Sdigital predistortion, Doherty power amplifier, GaN HEMT, peak-to-average power ratio

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Section: Resultsmentioning

confidence: 65%

A novel compact asymmetric Doherty PA design using symmetric transistors

Jin

Cheng

Wang

et al. 2022

Micro & Optical Tech Letters

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“…In addition, massive multiple-input multiple-output (MIMO) technology is adopted in base station for 5G communication, which contains over a hundred monolithic microwave integrated circuit (MMIC) power amplifiers for higher efficiency. Thus, miniaturization is another important issue for DPA used in base stations [9,10] Many studies about high efficiency DPA used in 5G communication have been reported [11][12][13][14][15][16][17]. A compact transmission line network is used to invert impedance in [15] for a high efficiency at OPBO, but it only shows a good performance at single frequency.…”

Section: Design Of Power Dividermentioning

confidence: 99%

A Broadband Asymmetrical GaN MMIC Doherty Power Amplifier with Compact Size for 5G Communications

Cheng

Wang

et al. 2021

Electronics

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This paper proposes a broadband asymmetrical monolithic microwave integrated circuit (MMIC) Doherty power amplifier (DPA) using 0.25-μm gallium-nitride process with a compact chip size of 2.37 × 1.86 mm2 for 5G communication. It adopts an unequal Wilkinson’s power divider with a ratio of 2.5:1, where 71.5% of the total power is transferred to the main amplifier for higher gain. Different input matching networks are used to offset phase difference while completing impedance conversion. This design also applies a novel topology to solve the problem of large impedance transformer ratio (ITR) in conventional DPA, and it optimizes the ITR from 4:1 to 2:1 for wider band. Moreover, most of the components of the DPA including power divider and matching networks use lumped inductors and capacitors instead of long transmission line (TL) for a smaller space area. The whole circuit is designed and simulated using Agilent’s advanced design system (ADS). The simulated small-signal gain of DPA is 8–11 dB and the saturation output power is more than 39.5 dBm with 800 MHz band from 4.5 GHz to 5.3 GHz. At 6-dB output power back-off, the DPA demonstrates 38–41.3% power added efficiency (PAE), whereas 44–54% PAE is achieved at saturation power.

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“…Reference [22] adds a grounded λ/4 line to the output of the peaking PA, which helps to compensate for the bandwidth limiting effect that occurs in the conventional combiner, thereby expanding the bandwidth. In reference [23], a parallel DPA architecture is adopted to reduce the impedance transmission ratio of the λ/4 impedance inverter to expand the bandwidth. Reference [24] to improve the bandwidth and back-off point efficiency of the DPA, the shunt λ/2 microstrip line is connected to the traditional DPA combiner to realize the broadband impedance transformation of the carrier power amplifier.…”

Section: Introductionmentioning

confidence: 99%

A Broadband Doherty Power Amplifier With a New Load Modulation Network

et al. 2021

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In this paper, we proposed a new load modulation method to improve bandwidth and efficiency at output power back-off (OBO) of the Doherty Power Amplifier (DPA). The quarter wavelength transmission line behind the combination point of the impedance inverter was replaced with a dualfrequency matching circuit to matche the impedance value of the combination point to the load impedance in this method. The dual-frequency matching was used to compensate for the frequency dispersion effect that occurs in the traditional impedance inverter network and to a certain extent solves the bandwidth limitation of the Doherty power amplifier. To verify the proposed theory, a broadband high-efficiency power amplifier was designed and manufactured for 5G mobile communications. Measurement results show that the designed DPA is in the range of 2.4-3.7GHz, the saturated output power is above 42dBm, the saturated drain efficiency is 61.2%-68.4%, and the 6dB back-off efficiency is 49.7%-61.4%.INDEX TERMS Doherty, load modulation network, dual-band, broadband, high efficiency, 5G

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Broadband Parallel Doherty Power Amplifier in GaN for 5G Applications

Cited by 20 publications

References 6 publications

A novel compact asymmetric Doherty PA design using symmetric transistors

A novel compact asymmetric Doherty PA design using symmetric transistors

A Broadband Asymmetrical GaN MMIC Doherty Power Amplifier with Compact Size for 5G Communications

A Broadband Doherty Power Amplifier With a New Load Modulation Network

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