Broadband near-IR double quantum-well heterostructure superluminescent diodes

Андреева, Е. В.; Volkov, N. A.; Kostin, Yu. O.; Lapin, P. I.; Маrmalyuk, А. А.; Сабитов, Д. Р.; Yakubovich, S D

doi:10.1070/qe2008v038n08abeh013772

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“…Significant research efforts have been focused upon increasing the spectral bandwidth as broadband SLDs are expected to improve depth resolutions for OCT systems [ 1 - 4 ]. A variety of approaches have been used to broaden the spectral bandwidth by engineering the device active regions through including quantum dots [ 1 ], multiple quantum wells (MQWs) [ 2 ], stacked twin active layers [ 5 ], asymmetric dual quantum wells [ 6 ], and quantum-well intermixing [ 7 ].…”

Section: Introductionmentioning

confidence: 99%

InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

Wang

et al. 2010

Nanoscale Res Lett

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The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100), (210), (311), and (731) substrates. A broad photoluminescence emission peak (~950 nm) with a full width at half maximum (FWHM) of 48 nm is obtained from the sample grown on (210) substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100) substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311) with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.

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Section: Introductionmentioning

confidence: 99%

InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

Wang

et al. 2010

Nanoscale Res Lett

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Broadband near-IR double quantum-well heterostructure superluminescent diodes

Cited by 1 publication

References 3 publications

InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

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