Broadband measurements of the refractive indices of bulk Gallium Nitride

Bowman, S. R.; Brown, Christopher; Brindza, Michael R.; Beadie, G.; Hite, Jennifer K.; Freitas, J. A.; Eddy, Charles R.; Meyer, J. R.; Vurgaftman, I.

doi:10.1364/ome.4.001287

Cited by 23 publications

(9 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For comparison, the extraordinary and ordinary refractive indices of GaN from two reports were plotted with the measured effective bulk indices. 32,33 As expected, the effective bulk indices are relatively bound between the two extremes of these reported values and in other reports. 34 This result further supports the correspondence between the numerical simulations and the experimental results.…”

supporting

confidence: 90%

“…The error bars are calculated by taking the maximum and the minimum of the measured periodicities and then tuning the refractive index to create the bounds to the measurement (Supporting Information). For comparison, the extraordinary and ordinary refractive indices of GaN from two reports were plotted with the measured effective bulk indices. , As expected, the effective bulk indices are relatively bound between the two extremes of these reported values and in other reports . This result further supports the correspondence between the numerical simulations and the experimental results.…”

supporting

confidence: 78%

“…The red and green dotted lines and the black and purple dotted lines correspond to the ordinary and extraordinary index of bulk GaN, respectively, from two different literature sources. 32,33 The measured effective bulk index can help with improving the design for photonic coupling structures that require precise phase-matching conditions.…”

Section: * S Supporting Informationmentioning

confidence: 99%

See 2 more Smart Citations

Widely Tunable Distributed Bragg Reflectors Integrated into Nanowire Waveguides

Gao

Petrov³

et al. 2015

Nano Lett.

View full text Add to dashboard Cite

Periodic structures with dimensions on the order of the wavelength of light can tailor and improve the performance of optical components, and they can enable the creation of devices with new functionalities. For example, distributed Bragg reflectors (DBRs), which are created by periodic modulations in a structure's dielectric medium, are essential in dielectric mirrors, vertical cavity surface emitting lasers, fiber Bragg gratings, and single-frequency laser diodes. This work introduces nanoscale DBRs integrated directly into gallium nitride (GaN) nanowire waveguides. Photonic band gaps that are tunable across the visible spectrum are demonstrated by precisely controlling the grating's parameters. Numerical simulations indicate that in-wire DBRs have significantly larger reflection coefficients in comparison with the nanowire's end facet. By comparing the measured spectra with the simulated spectra, the index of refraction of the GaN nanowire waveguides was extracted to facilitate the design of photonic coupling structures that are sensitive to phase-matching conditions. This work indicates the potential to design nanowire-based devices with improved performance for optical resonators and optical routing.

show abstract

supporting

confidence: 90%

supporting

confidence: 78%

Section: * S Supporting Informationmentioning

confidence: 99%

See 1 more Smart Citation

Widely Tunable Distributed Bragg Reflectors Integrated into Nanowire Waveguides

Gao

Petrov³

et al. 2015

Nano Lett.

View full text Add to dashboard Cite

show abstract

“…On the other hand, emitters in GaN are embedded at a depth of a few micrometers, and this reduces the fluctuations caused by electrostatic fields. However, the flat surface with high refractive index of GaN significantly decreases its photon collection efficiency, according to the total internal reflection effect [34].…”

Section: Discussionmentioning

confidence: 99%

Characterization of single photon sources for radiometry applications at room temperature

Lim,

Lee,

Bae

et al. 2020

Preprint

View full text Add to dashboard Cite

A single photon source with high repeatability and low uncertainties is the key element for few-photon metrology based on photon numbers. While low photon number fluctuations and high repeatability are important figures for qualification as a standard light source, these characteristics are limited in single photon emitters by some malicious phenomena like blinking or internal relaxations to varying degrees in different materials. This study seeks to characterize photon number fluctuations and repeatability for radiometry applications at room temperature. For generality in this study, we collected photon statistics data with various single photon emitters of g (2) (0) < 1 at low excitation power and room temperature in three material platforms: silicon vacancy in diamond, defects in GaN, and vacancy in hBN. We found common factors related with the relaxation times of the internal states that indirectly affect photon number stability. We observed a high stability of photon number with defects in GaN due to faster relaxations compared with vacancies in hBN, which on the other hand produced high rates (> 10 6 ) of photons per second. Finally, we demonstrate repeatable radiant flux measurements of a bright hBN single photon emitter for a wide radiant flux range from a few tens of femtowatts to one picowatt.

show abstract

“…However, all of these structures are based on using a single crystal orientation. Engineering structures with opposing polar faces (III-or N-polar) abutting one another on a single substrate opens a promising avenue to using these materials for frequency conversion via quasi-phase matching [8][9][10]. The interest in III-Ns in frequency conversion over more conventional materials stems from their wide band gaps, high thermal conductivity, and wide transparency windows [11].…”

Section: Introductionmentioning

confidence: 99%

Progress in periodically oriented III-nitride materials

Hite

2016

Journal of Crystal Growth

View full text Add to dashboard Cite

The ability to grow III-nitride structures with alternating c-plane orientation has garnered interest in using these materials for new application spaces, such as frequency conversion. An overview of recent progress in growing periodically oriented (PO) III-nitrides is discussed, including AlN, AlGaN, and GaN. Successes in fabricating thick PO GaN structures (>500mm) for uses in frequency conversion are highlighted.

show abstract

Broadband measurements of the refractive indices of bulk Gallium Nitride

Cited by 23 publications

References 13 publications

Widely Tunable Distributed Bragg Reflectors Integrated into Nanowire Waveguides

Widely Tunable Distributed Bragg Reflectors Integrated into Nanowire Waveguides

Characterization of single photon sources for radiometry applications at room temperature

Progress in periodically oriented III-nitride materials

Contact Info

Product

Resources

About