Broadband integrated optical modulators: achievements and prospects

Петров, В. М.; Agruzov, P. M.; Лебедев, В. В.; Il’ichev, I. V.; Shamray, A. V.

doi:10.3367/ufne.2020.11.038871

Cited by 21 publications

(8 citation statements)

References 125 publications

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“…The scheme of the proposed RoF transmitting system with optically powered RAU is shown in Figure 1. The RAU is based on a dual output lithium niobate Mach-Zehnder modulator (LN MZM) [14]. The titanium in-diffused optical waveguides [15] form an optical scheme of the LN MZM.…”

Section: System Configurationmentioning

confidence: 99%

Power-over-Fiber with Simultaneous Transmission of Optical Carrier for a High Frequency Analog Signal over Standard Single-Mode Fiber

et al. 2022

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Efficient simultaneous transmission of light with a power of more than 2 W at a wavelength of 976 nm and an optical carrier for transmitting a high-frequency analog signal at a wavelength of 1550 nm over a distance of 1 km over a standard single-mode fiber was experimentally demonstrated. Electrical power up to 350 mW (5 V, 70 mA) was obtained from a multi-junction silicon photocell, resulting in the optical transmission efficiency of about 70% and a photocell efficiency of 25%. The power transmission did not affect the transmission of the high frequency analog signal. Key broadband analog transmission characteristics such as noise figure (NF < 25 dB) and spurious-free dynamic range (SFDR3 > 117 dB/Hz2/3) were achieved and were close to the fundamental shot noise limit. This approach is promising for powering a remote antenna unit in optical fronthaul architecture.

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Section: System Configurationmentioning

confidence: 99%

Power-over-Fiber with Simultaneous Transmission of Optical Carrier for a High Frequency Analog Signal over Standard Single-Mode Fiber

et al. 2022

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“…In the photonics domain, the optical modulator stands out as a preeminent component, playing a pivotal role in converting electrical signals into optical information. High-speed modulators have broadband capabilities and high modulation depths which are essential for integrated optoelectronic devices [1,2,[5][6][7]. However, such devices do have some limitations that include low switching rate, low bandwidth, or large dimensions.…”

Section: Introductionmentioning

confidence: 99%

“…DN e is change of electron number and DN h is hole density changes. The input parameters of the CHARGE solver, which describe the physical and electrical characteristics of the simulated silicon device, are provided by equations (5) and(6), where dn Ap and dn An are values of the refractive index resulting from changes in free-hole and free-electron carrier concentrations, respectively. These are values that indicate the doping profile within the silicon material.…”

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confidence: 99%

Enhancing modulation performance by design of hybrid plasmonic optical modulator integrating multi-layer graphene and TiO₂ on silicon waveguides

Supasai,

Siritaratiwat,

Srichan

et al. 2024

Nanotechnology

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A novel way to enhance modulation performance is through the design of a hybrid plasmonic optical modulator that integrates multi-layer graphene and TiO2 on silicon waveguides. In this article, a design is presented of a proposed modulator based on the use of the two-dimensional finite difference eigenmode solver, the three-dimensional eigenmode expansion solver, and the CHARGE solver. Leveraging inherent graphene properties and utilizing the subwavelength confinement capabilities of hybrid plasmonic waveguides (HPWs), we achieved a modulator design that is both compact and highly efficient. The electrical bandwidth f 3dB is at 460.42 GHz and it reduces energy consumption to 12.17 fJ/bit with a modulator that functions at a wavelength of 1.55 μm. According to our simulation results, our innovation was the optimization of the third dielectric layer’s thickness, setting the stage to achieve greater modulation depths. This synergy between graphene and HPWs not only augments subwavelength confinement, but also optimizes light–graphene interaction, culminating in a markedly enhanced modulation efficiency. As a result, our modulator presents a high extinction ratio and minimized insertion loss. Furthermore, it exhibits polarization insensitivity and a greater bandwidth. Our work sets a new benchmark in optical communication systems, emphasizing the potential for the next generation of chip-scale with high-efficiency optical modulators that significantly outpace conventional graphene-based designs.

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“…Lithium niobate (LN, LiNbO 3 ) has been one of the most attractive materials in integrated photonics for several decades [1][2][3] due to its large transparency window and its electro-optical and non-linear optical properties enabling fast light control and switching. Widespread commercially available broadband LN modulators are based on optical waveguides fabricated using titanium diffusion or proton exchange [1,2], with relatively weak light localization and large transverse mode sizes of about 10 µm.…”

Section: Introductionmentioning

confidence: 99%

Metal Electrodes for Filtering the Localized Fundamental Mode of a Ridge Optical Waveguide on a Thin Lithium Niobate Nanofilm

Parfenov,

Agruzov,

Tronev

et al. 2023

Nanomaterials

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An approach for filtering the fundamental mode in an integrated optical modulator with multimode waveguides based on etched thin lithium niobate nanofilms is presented. It is shown that metal electrodes can be used as a modal filter to suppress high-order modes in wide multimode ridge waveguides and, consequently, to provide their quasi-single-mode regime of operation. The influence of the gap between the electrodes and its displacement relative to the waveguide symmetry axis is analyzed for various configurations of waveguides. The conditions for quasi-single-mode light propagation with suppression of high-order modes of more than 90 dB/cm are found. The influence of fabrication errors on the efficiency of modal filtering is discussed. Efficient electro-optical modulation with an equivalent voltage-length product of 4 V∙cm has been experimentally demonstrated on integrated optical phase modulator samples fabricated using conventional contact photolithography. The proposed topological solution can be further used for the fast and cheap fabrication of TFLN modulators by conventional contact photolithography. The proposed modal filtering can also be used in other waveguide topologies and in more complex waveguide devices.

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Broadband integrated optical modulators: achievements and prospects

Cited by 21 publications

References 125 publications

Power-over-Fiber with Simultaneous Transmission of Optical Carrier for a High Frequency Analog Signal over Standard Single-Mode Fiber

Power-over-Fiber with Simultaneous Transmission of Optical Carrier for a High Frequency Analog Signal over Standard Single-Mode Fiber

Enhancing modulation performance by design of hybrid plasmonic optical modulator integrating multi-layer graphene and TiO₂ on silicon waveguides

Metal Electrodes for Filtering the Localized Fundamental Mode of a Ridge Optical Waveguide on a Thin Lithium Niobate Nanofilm

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Broadband integrated optical modulators: achievements and prospects

Cited by 21 publications

References 125 publications

Power-over-Fiber with Simultaneous Transmission of Optical Carrier for a High Frequency Analog Signal over Standard Single-Mode Fiber

Power-over-Fiber with Simultaneous Transmission of Optical Carrier for a High Frequency Analog Signal over Standard Single-Mode Fiber

Enhancing modulation performance by design of hybrid plasmonic optical modulator integrating multi-layer graphene and TiO2 on silicon waveguides

Metal Electrodes for Filtering the Localized Fundamental Mode of a Ridge Optical Waveguide on a Thin Lithium Niobate Nanofilm

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Product

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About

Enhancing modulation performance by design of hybrid plasmonic optical modulator integrating multi-layer graphene and TiO₂ on silicon waveguides