Broadband integrated millimeter-wave up- and down-converter GaAs MMICs

Mahon, Simon J.; Convert, Emmanuelle R. O.; Beasly, P.; Bessemoulin, A.; Dadello, A.; Costantini, A.; Fattorini, Anthony P.; McCulloch, MacCrae G.; Lawrence, Ben; Harvey, James T.

doi:10.1109/tmtt.2006.872793

Cited by 29 publications

(15 citation statements)

References 5 publications

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“…The performance of the presented chip is better than that of [10] in terms of bandwidth, conversion gain, and output power. The performance of the chip is very similar to that of [11] with compact layout area. However, the required LO power (9-16 dBm) is higher which can be reduced to 0 dBm by further integrating single stage LO amplifier.…”

Section: Results Of the Integrated Up-converter Mmic And Discusionmentioning

confidence: 79%

“…The maximum conversion gain for the RF frequency of 22-38 GHz is between 9-16 dB. The required LO power for the maximum conversion gain varies between 9-16 dBm for different LO frequencies of [10][11][12][13][14][15][16][17][18][19] GHz. This variation is because of the insertion loss of the RF/IF short circuit at LO port of the SHP mixers and return loss due to the mismatch at the LO port of the integrated up-converter.…”

Section: Results Of the Integrated Up-converter Mmic And Discusionmentioning

confidence: 99%

“…The conversion gain and output power of the up-converter was only 5 dB and 3 dBm, respectively. Mahon et al have also reported low band and high band up-and downconverters [11]. However, there is lack of publications on the integrated Ka-band up-and down-converter MMICs and their detailed study by comparison of simulation and measurement results.…”

Section: Introductionmentioning

confidence: 99%

“…The chip is operated for the wide bandwidth of the RF frequency from 22-38 GHz. Due to sub-harmonic mixing the required local oscillator frequency (LO) is reduced to half (10)(11)(12)(13)(14)(15)(16)(17)(18)(19) to that of the RF frequency. The conversion gain of the chip is 9-15 dB and P −1 dB output power is 7-12 dBm.…”

mentioning

confidence: 99%

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Integrated Compact Broad Ka-Band Sub-Harmonic Single Sideband Up-Converter Mmic

Singhal¹,

Basu²,

Wang³

2009

PIER C

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Abstract-Design, simulation and measurement results of the integrated compact up-converter MMICs (microwave monolithic integrated circuits) are presented and discussed. The design is performed to achieve low cost and high performance transmitter system for the Ka-band frequency applications. It is designed using antiparallel diode pair sub-harmonic single sideband mixer and three stage RF (radio frequency) amplifier. Microstrip lines and lumped elements are used together to achieve a compact chip size. The layouts of the circuits are designed with careful EM (electromagnetic) simulations to avoid inter-component couplings and effect of the microstrip bending discontinuities. The chip is operated for the wide bandwidth of the RF frequency from 22-38 GHz. Due to sub-harmonic mixing the required local oscillator frequency (LO) is reduced to half (10)(11)(12)(13)(14)(15)(16)(17)(18)(19) to that of the RF frequency. The conversion gain of the chip is 9-15 dB and P −1 dB output power is 7-12 dBm. The single sideband and anti-parallel diode pair suppress the in-band unwanted sideband and second harmonic of the local oscillator (2LO), respectively. The suppression of sideband and 2LO signals is typically 20-35 dB and 20-30 dB, respectively. The size of the chip is as compact as 4.2 mm 2 on a 100 µm-thick GaAs substrate.

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Section: Results Of the Integrated Up-converter Mmic And Discusionmentioning

confidence: 79%

Section: Results Of the Integrated Up-converter Mmic And Discusionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Integrated Compact Broad Ka-Band Sub-Harmonic Single Sideband Up-Converter Mmic

Singhal¹,

Basu²,

Wang³

2009

PIER C

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“…Additionally, there is a great demand on the Ka-band phased-array radar for military and commercial applications, which includes communications, navigation, weather forecast and so on. To meet the market demands, many researchers have developed highly monolithic microwave integrated circuits (MMICs) design and compact chip size for the high speed system applications [1,2].…”

mentioning

confidence: 99%

Broad-band direct QPSK modulator/demodulator for wireless gigabit communication

Cao

Liu

et al. 2013

Chin. Sci. Bull.

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The design and measured results of a broad-band direct quadrature phase shift keying (QPSK) modulator and demodulator are described in this paper. The circuits are fabricated using 1-m GaAs HBT technology. To suppress the local oscillator (LO) leakage, the double-balanced mixer is selected as the core unit in the modulator/demodulator. An embedded four-way quadrature divider which includes a Lange coupler and two Baluns is utilized in the system to generate quadrature-phase LO signals. As results of a back-to-back test, the system can operate at data rates in excess of 2 Gb/s (1 Gb/s per I and Q channels) at 30 GHz. The growing data communication speed, bandwidth limitation and congestions at lower frequencies have resulted in the move toward high frequency system. Wireless systems at Ka-band frequencies have various applications such as in point-to-point, point-to-multipoint, and very small aperture terminal (VSAT) systems. One of the most promising wireless communications service is the Local Multipoint Communication Service (LMCS). Additionally, there is a great demand on the Ka-band phased-array radar for military and commercial applications, which includes communications, navigation, weather forecast and so on. To meet the market demands, many researchers have developed highly monolithic microwave integrated circuits (MMICs) design and compact chip size for the high speed system applications [1,2]. Direct conversion architecture (DCA) greatly reduces front-end hardware complexity, lower cost and no image frequency comparing to heterodyne technique [3][4][5]. Therefore, passive reflection-type demodulator and modulator have been reported in various process [6][7][8] for millimeterwave (MMW) direct conversion systems, even gigabit data rate. However, the local oscillator (LO) leakage and image suppression in these transceivers need be carefully considered. Because the LO signal and RF signal are connected in the same device. In addition, the baseband signals of the refection-type modulators need be calibrated, which will limit its applications.The Ka-band has several features that render it ideal for high-data-rate radio links. The wide bandwidth available permits high speed transmission by utilizing a simple modulation scheme such as quadrature phase-shift keying (QPSK). Most importantly, antennas with high gain and directivity are easily realizable in this frequency range with apertures less than 2.3 f t [9]. However, in the compact chip die the passive components need be carefully considered to ensure broad-band phase and amplitude balance of the IQ signals.This paper presents a broad-band modulator and demodulator using 1-m GaAs HBT technology for direct conversion

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A Broadband Image-Rejection Sub-harmonically Pumped Mixer MMIC for Ka-band Applications

Peng

Wang

et al. 2011

Lecture Notes in Electrical Engineering

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Broadband integrated millimeter-wave up- and down-converter GaAs MMICs

Cited by 29 publications

References 5 publications

Integrated Compact Broad Ka-Band Sub-Harmonic Single Sideband Up-Converter Mmic

Integrated Compact Broad Ka-Band Sub-Harmonic Single Sideband Up-Converter Mmic

Broad-band direct QPSK modulator/demodulator for wireless gigabit communication

A Broadband Image-Rejection Sub-harmonically Pumped Mixer MMIC for Ka-band Applications

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