“…Slow-wave regimes are found promising in developing Carbon Nanotube antenna systems as well [13]. Use of X-topology equivalent circuit model derivation discussed in [14][15] for analysis of micronic metal-fill tiling is proposed for modeling slow-wave transition mechanisms. Use of hybrid lattice and or T networks is discussed in [16] for the design and optimization of slow-wave transmission lines.…”
Section: Main Results Analysis and Discussionmentioning
“…Slow-wave regimes are found promising in developing Carbon Nanotube antenna systems as well [13]. Use of X-topology equivalent circuit model derivation discussed in [14][15] for analysis of micronic metal-fill tiling is proposed for modeling slow-wave transition mechanisms. Use of hybrid lattice and or T networks is discussed in [16] for the design and optimization of slow-wave transmission lines.…”
Section: Main Results Analysis and Discussionmentioning
“…In this contribution we propose application of the second alternative to increase reactive energy storage by means of floating inductive and capacitive coupling to improve selectivity. In order to bridge EM fields considerations with electrical equivalent circuits representations eigen-states formulation is introduced for physics based design methodology synthesis [3,4]. The proposed design methodology approach in order to map EM fields oriented-analysis (Topology-driven) with equivalent circuit based models (schematicdriven) considers modal-state representations to capture topology related specifics and attributes.…”
“…Instead of only acting to reduce conductor and dielectric losses, ability to increase storage of reactive energy represents an innovative alternative. Such technique necessitates proper analysis of grounding [4] connections (floating, local ground or global ground access), mutual inductance/capacitance couplings with respect both to micro-strip and CPW configurations.…”
A novel filter analysis approach based on eigen-state formulation towards a systematic synthesis methodology is proposed. The proposed methodology renders possible bridging topology related aspects (geometry) with network representations. An innovative selectivity enhancement technique based on physical aspects drawn from energy dissipation considerations is proposed. Instead of only acting to reduce conductor and dielectric losses proposal is to consider increasing ability to store reactive energy as well, through inductive and capacitive couplings. Experimental verifications are carried out to validate the proposed concept. Tunability attributes are demonstrated for selectivity control.
“…Hence, the necessity of multi-physics methodologies for bridging the gap between electrical description and piezo-electrical representations accounting for power-energy conversion mechanisms. In Fig.1, Xtopology architecture is introduced to optimize the quality factor of the twin resonators based on variation of Z parameter [3].The introduced electro-mechanical coupling module in Fig.1 …”
Section: A Broadband Modeling Of Crystal Resonators Including Mechanmentioning
confidence: 99%
“…A separate branch of identified mode (fundamental) with an effective motional branch composed of R,L,C, and G as in Fig.2(a) has the admittance Y Crystal given by equation (3). The analysis of the admittance frequency response shows the existence of resonance (Series) and antiresonance (Parallel) frequencies with respectively pulsations ω Series =L n -1/2 C n -1/2 and ω Parallel .…”
Section: A Broadband Modeling Of Crystal Resonators Including Mechanmentioning
This paper presents an original multi-physics modeling methodology for the design and analysis of integrated crystal oscillators based on power-waves formulation. Conventional Barkhausen oscillation conditions criterion is derived in terms of reflection coefficients. Coupling module is introduced between the crystal resonator and the oscillator active-core in order to account for electromechanical energy conversion aspects. The proposed methodology is successfully applied to the design of low power and low noise integrated crystal oscillator in NXPSemiconductors advanced BiCMOS technology. A phase noise better than -152dBc/Hz at 10KHz carrier offset with noise supply rejection better than -65dB are demonstrated.
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