2015
DOI: 10.1038/srep12788
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Broadband Epsilon-Near-Zero Perfect Absorption in the Near-Infrared

Abstract: Perfect absorption (PA) of incident light is important for both fundamental light-matter interaction studies and practical device applications. PA studies so far have mainly used resonant nanostructures that require delicate structural patterning. Here, we realize tunable and broadband PA in the near-infrared region using relatively simple thin film coatings. We adjust the growth condition of an ITO film and control its epsilon-near-zero (ENZ) wavelength. We show that this results in highly tunable PA in the t… Show more

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Cited by 132 publications
(91 citation statements)
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“…(10). In certain applications, it is desirable to realize the perfect photon absorption with a broad bandwidth [31]. For the CQED system, one can have a cavity with >> while operating in the linear excitation regime of the CQED system with and at resonance (p=c=0); then by matching the condition .…”
Section: Theoretical Model and Analysismentioning
confidence: 99%
“…(10). In certain applications, it is desirable to realize the perfect photon absorption with a broad bandwidth [31]. For the CQED system, one can have a cavity with >> while operating in the linear excitation regime of the CQED system with and at resonance (p=c=0); then by matching the condition .…”
Section: Theoretical Model and Analysismentioning
confidence: 99%
“…Of particular relevance for this work are materials which exhibit a real part of the dielectric permittivity that is zero, or close to zero, such as transparent conducting oxides where their permittivity cross over is typically located in the near infrared spectral region. The linear properties of these "epsilon-near-zero" (ENZ) materials have been investigated [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32] for applications ranging from controlling the radiation pattern of electromagnetic sources to novel waveguiding regimes and perfect absorption. Similarly, the nonlinear properties have also been shown to be largely effected by the ENZ condition [33][34][35][36][37][38][39][40], and recently it has been theoretically predicted that the interplay between linear and nonlinear properties of ENZ bulk materials may allow threedimensional self-trapping of light [41].…”
mentioning
confidence: 99%
“…A recent alternative relies on the management of the plasma frequency [13] at which the dielectric permittivity reaches zero. In solid-state photonics, recent contributions have shown the feasibility of ENZ materials at telecommunication frequencies by adjusting the free carrier concentration of transparent conducting oxides such as Indium Tin Oxide (ITO) or Aluminium Zinc Oxide (AZO) [14][15][16], paving the way to practical implementations and to the validation of proposed ENZ concepts.…”
Section: Metamaterialsmentioning
confidence: 99%
“…In the following, the dielectric constant is set to 10 −4 . Note that recent contributions on conductive oxide materials for ENZ applications show a real part of the dielectric constant that goes continuously from positive to negative values [14][15][16]. Then, it is realistic to expect values as small as 10…”
mentioning
confidence: 99%
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