Broadband (8–14 μm), normal incidence, pseudomorphic GexSi1−x/Si strained-layer infrared photodetector operating between 20 and 77 K

Abstract

Performance characteristics of a pseudomorphic p-type, normal incidence, Ge0.25Si0.75/Si strained-layer quantum well infrared photodetector on (001) Si is described for 20≤T≤77 K. The device shows broadband photoresponse (8–14 μm) which is attributed to strain and quantum confinement induced mixing of heavy, light, and split-off hole bands. Typical device responsivity at λ=10.8 μm is ∼0.04 A/W over the 20–77 K temperature range. A detectivity D*λ=3.3×109 cm √Hz/W was measured at a bias of −2.4 V for a temperature of 77 K at λ=10.8 μm and no cold shield. Room temperature FTIR measurements yield a quantum efficiency η≊3.1% at λp≊8 μm at 300 K.

Electrodeposition of Ge, Sn and GexSn1-x from two different room temperature ionic liquids

“…In this paper, we show the electrodeposition of another group IV semiconductor (Ge x Sn 1-x ) from 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)amide ([Py 1 , 4 ]Tf 2 N) and 1-butyl-1-methylpyrrolidinium trifluoromethylsulfonate ([Py 1,4 ]TfO) at room temperature. We investigated the formation of the compound using CV.…”

“…Due to the lattice mismatch of 4.2 %, the band gap of Si x Ge 1-x is sensitive to the Ge concentration in the compound. The application of Si x Ge 1-x in various devices such as solar cells [1], field effect transistors (MODFET) [2], light-emitting diodes [3] and infrared detectors [4] has been considered.…”

Responsivity of quantum well infrared photodetectors at terahertz detection wavelengths

“…12, and the absolute values of the responsivity were calculated assuming a constant quantum efficiency of 10% which is typical of many n-and p-type devices. 7,12,13 The number of wells in Fig. 3 was fixed at Nϭ10.…”

Oblique roughness replication in strained SiGe/Si multilayers

“…1 The associated well width fluctuations broaden the distribution of subband energies and correspondingly the intersubband transition energies relevant, e.g., for SiGe-based multi-quantum-well infrared detectors. [2][3][4] Commercially available Si͑001͒ substrates usually have an unintentional miscut in the range of 0.2°-0.5°, and the epitaxial growth in this case may be dominated by the flow of monolayer steps. I.e., if the growth conditions provide for sufficiently large surface diffusion lengths, the impinging adatoms are incorporated preferably at the step edges.…”