Broad-stripe single longitudinal mode laser based on metal slots

Advances in narrow linewidth diode lasers

“…Our research team in CIOMP designed and fabricated a wide-band high-order grating distributed Bragg reflection (DBR) laser. The DBR laser achieved a 3 dB spectral linewidth less than 0.04 nm (∼13.13 GHz) and a stable single longitudinal mode laser output of 213 mW with a side-mode suppression ratio (SMSR) of 42 dB [6]. Then, a shallow etching high-order grating distributed feedback semiconductor laser structure based on a gain coupling mechanism is proposed [7].…”

Advances in high power high beam quality diode lasers

“…2011年, 研制出1064 nmDBR 激光器, 连续输出功率180 mW、线宽为180 kHz [37] . 中国科学院长春光学精密机械与物理研究所研制出 38阶光栅耦合DBR半导体激光器, 获得213 mW、线 宽40 pm单纵模出光, 边模抑制比40 dB [38] . 宽0.3 nm [42] ; 韩国Gwangju科学院和加拿大国立研究 院研制的1.55 μm三阶和二阶光栅DFB, 单纵模功率 为15 mW [43,44] ; [45] ; 设计并研制出940 nm二阶光栅DFB半导体激 光器, 连续输出101 mW、光谱线宽90 pm、远场发散 角为2.7°和7.3°、边模抑制比20 dB [46] .…”

Advances in narrow linewidth diode lasers

“…本研究团队研究设计并制备了一种宽条高阶光栅分布布拉格反射 (distributed Bragg reflector, DBR) 激光器 [6] , 这种 DBR 激光器实现了 3 dB 光谱线宽小于 0.04 nm (13.13 GHz), 出光功率 213 mW 的稳定单纵模激光输出, 其边模抑制比达到 42 dB. 而后又提出了一种基于增益耦合机理 的表面浅刻蚀高阶光栅分布反馈半导体激光器 [7] .…”