2016
DOI: 10.1088/0022-3727/49/46/465103
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Broad range tuning of structural and optical properties of ZnxMg1−xO nanostructures grown by vapor transport method

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Cited by 5 publications
(5 citation statements)
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“…It is possible to design a device emitting specific light within this region by adjusting the composition. The studies on Zn x Mg 1−x O indicated that crystal structure and emission characteristics change depending on the composition [19]. It was reported in [19] that Mg-rich compounds may be used to design optoelectronic devices operating at deep UV range.…”
Section: Introductionmentioning
confidence: 99%
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“…It is possible to design a device emitting specific light within this region by adjusting the composition. The studies on Zn x Mg 1−x O indicated that crystal structure and emission characteristics change depending on the composition [19]. It was reported in [19] that Mg-rich compounds may be used to design optoelectronic devices operating at deep UV range.…”
Section: Introductionmentioning
confidence: 99%
“…The studies on Zn x Mg 1−x O indicated that crystal structure and emission characteristics change depending on the composition [19]. It was reported in [19] that Mg-rich compounds may be used to design optoelectronic devices operating at deep UV range. There are limited studies on NaBi(Mo x W 1−x O 4 ) 2 compounds in the literature.…”
Section: Introductionmentioning
confidence: 99%
“…46 Substitutional doping of Mg with ZnO, on the other hand, has been described as a means of engineering the bandgap of a ternary Zn x Mg 1– x O system as high as a 5.8 eV for solar-blind photodetectors. 710 Although Mg has been reported as a feasible dopant to ZnO (due to the similar ionic radii of Zn 2+ and Mg 2+ ), 11,12 Mg/ZnO alloy systems have also shown to phase segregate for high Mg content. 13 Thus, the development of reliable techniques toward synthesizing aligned ZnO nanowires, and appreciably incorporating Mg during synthesis is of great significance.…”
Section: Introductionmentioning
confidence: 99%
“…Ultraviolet, solar-blind communication systems that exploit atmospheric scattering to propagate signals toward a nonline of sight receiver (with ranges on the order of kilometers) have been examined extensively, yet the detectors in these receiver systems have largely been dominated by bulky and costly photomultiplier tubes. Semiconductor-based deep-UV detectors have consequently become of great interest due to their potential advantages of producing low-cost, low-power-consumption, highly scalable solutions. Although ZnO nanowire (NW)-based photodetectors have been heavily investigated, this material system only exhibits a cutoff detection corresponding to the band-edge energy of ZnO in the UV-A spectrum (3.10–3.94 eV). Substitutional doping of Mg with ZnO, on the other hand, has been described as a means of engineering the bandgap of a ternary Zn x Mg 1– x O system as high as a 5.8 eV for solar-blind photodetectors. Although Mg has been reported as a feasible dopant to ZnO (due to the similar ionic radii of Zn 2+ and Mg 2+ ), , Mg/ZnO alloy systems have also shown to phase segregate for high Mg content . Thus, the development of reliable techniques toward synthesizing aligned ZnO nanowires, and appreciably incorporating Mg during synthesis is of great significance.…”
Section: Introductionmentioning
confidence: 99%
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