Broad optical bandwidth InGaAs-InAlGaAs light-emitting diodes fabricated using a laser annealing process

McDougall, S.D.; Kowalski, O.P.; Marsh, J.H.; Aitchison, J. S.

doi:10.1109/68.806845

Cited by 16 publications

(6 citation statements)

References 9 publications

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“…Several methods have been discussed to realize a broad spectral band which relies on techniques such as single quantum well, 3 chirped quantum wells, 4 intermixed quantum wells, 6 or bulk materials as the active medium. 5 More recently quantum dot ͑QD͒ materials have attracted attention due to their naturally broad emission spectrum from the ground state of the QDs 7-10 resulting from size fluctuations of the order of ϳ10%.…”

Section: Introductionmentioning

confidence: 99%

Design, growth, fabrication, and characterization of InAs∕GaAs 1.3μm quantum dot broadband superluminescent light emitting diode

Ray

Groom

Alexander

et al. 2006

Journal of Applied Physics

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In this paper we discuss a technique for broadening the emission and gain spectra of 1.3 m quantum dot superluminescent light emitting diodes ͑SLEDs͒. By incorporating different amounts of indium in different wells of a multi-dot-in-well stack we are able to tailor the emission and gain spectra of the devices. This technique allows us to overlap the ground state of one dot-in-well ͑DWELL͒ with the excited state of another to achieve broader and flatter emission spectra compared to a SLED design comprising DWELL layers of constant indium composition. Due to the low internal loss of these structures, this broadening is achieved without a significant reduction in the output power of the devices.

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Section: Introductionmentioning

confidence: 99%

Design, growth, fabrication, and characterization of InAs∕GaAs 1.3μm quantum dot broadband superluminescent light emitting diode

Ray

Groom

Alexander

et al. 2006

Journal of Applied Physics

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“…InGaAlAs quaternary alloys have been of much interest for optoelectronic devices operating at 1.0 to 1.65 mm [1][2][3][4][5]. The digital-alloy technique has been used to grow ternary or quaternary alloys by molecular-beam epitaxy (MBE).…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent Luminescence Properties of Digital-alloy In(Ga_1−zAl_z)As

Cho

Ryu

Song

2018

Appl. Sci. Converg. Technol.

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The optical properties of the digital-alloy (In 0.53 Ga 0.47 As) 1-z /(In 0.52 Al 0.48 As) z grown by molecular beam epitaxy as a function of composition z (z = 0.4, 0.6, and 0.8) have been studied using temperature-dependent photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy. As the composition z increases from 0.4 to 0.8, the PL peak energy of the digital-alloy In(Ga 1-z Al z)As is blueshifted, which is explained by the enhanced quantization energy due to the reduced well width. The decrease in the PL intensity and the broaden FWHM with increasing z are interpreted as being due to the increased Al contents in the digital-alloy In(Ga 1-z Al z)As because of the intermixing of Ga and Al in interface of InGaAs well and InAlAs barrier. The PL decay time at 10 K decreases with increasing z, which can be explained by the easier carrier escape from InGaAs wells due to the enhanced quantized energies because of the decreased InGaAs well width as z increases. The emission energy and luminescence properties of the digitalalloy (InGaAs) 1-z /(InAlAs) z can be controlled by adjusting composition z.

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“…A number of methods have been discussed to realise a broad optical spectrum, which rely on techniques such as chirped quantum wells, 2) or intermixed quantum wells. 3) More recently quantum dot (QD) materials have attracted attention due to their naturally broad emission spectrum from the ground state of the QDs. [4][5][6][7] However, in achieving high optical powers, emission from the excited states of the QDs has been utilised due to the low saturated gain of the quantum dot ground state.…”

Section: Introductionmentioning

confidence: 99%

Broad-Band Superluminescent Light Emitting Diodes Incorporating Quantum Dots in Compositionally Modulated Quantum Wells

Ray

Groom

Beattie

et al. 2006

jjap

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We demonstrate a technique for tailoring the emission bandwidth of ∼1.3 µm quantum dot superluminescent light emitting diodes. A broadening of the emission is achieved by incorporating the InAs quantum dot layers in InGaAs quantum wells of different indium compositions. These structures exhibit a broader and flatter emission compared to a simple dot-in well structure comprised of wells of identical indium composition.

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Broad optical bandwidth InGaAs-InAlGaAs light-emitting diodes fabricated using a laser annealing process

Cited by 16 publications

References 9 publications

Design, growth, fabrication, and characterization of InAs∕GaAs 1.3μm quantum dot broadband superluminescent light emitting diode

Design, growth, fabrication, and characterization of InAs∕GaAs 1.3μm quantum dot broadband superluminescent light emitting diode

Temperature-dependent Luminescence Properties of Digital-alloy In(Ga_1−zAl_z)As

Broad-Band Superluminescent Light Emitting Diodes Incorporating Quantum Dots in Compositionally Modulated Quantum Wells

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Broad optical bandwidth InGaAs-InAlGaAs light-emitting diodes fabricated using a laser annealing process

Cited by 16 publications

References 9 publications

Design, growth, fabrication, and characterization of InAs∕GaAs 1.3μm quantum dot broadband superluminescent light emitting diode

Design, growth, fabrication, and characterization of InAs∕GaAs 1.3μm quantum dot broadband superluminescent light emitting diode

Temperature-dependent Luminescence Properties of Digital-alloy In(Ga1−zAlz)As

Broad-Band Superluminescent Light Emitting Diodes Incorporating Quantum Dots in Compositionally Modulated Quantum Wells

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Temperature-dependent Luminescence Properties of Digital-alloy In(Ga_1−zAl_z)As