Broad-band photoresponse from InAs quantum dots embedded into InGaAs graded well

Liang, Jianing; Chua, Ying Chao; Manasreh, M. O.; Marega, E.; Salamo, Gregory J.

doi:10.1109/led.2005.854392

Cited by 4 publications

(4 citation statements)

References 6 publications

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“…We consider the 2DEG in a GaAs/In x Ga 1− x As/GaAs parabolically graded QW, which was fabricated successfully before 38 39 40 , with a triangular antidot lattice (see Fig. 1(a) .…”

Section: Resultsmentioning

confidence: 99%

“…We employ the eight-band Kane k · p model to calculate the subband structure with SOIs in a 40-nm-thick GaAs/In x Ga 1− x As/GaAs parabolically graded QWs 38 39 , as plotted in Fig. 2(a) .…”

Section: Resultsmentioning

confidence: 99%

“…Very recently, a honeycomb lattice of coronene molecules was created by using a cryogenic scanning tunneling microscope on a Cu(111) surface to construct artificial graphene-like lattice with the lattice constant approaching 5nm [39]. We consider the 2DEG in a GaAs/In x Ga 1−x As/GaAs PQW, which was fabricated successfully before [40][41][42], with a triangular antidot lattice (see Fig. 1(a)).…”

Section: Effective Hamiltonian and Quantum Spin Hall Statesmentioning

confidence: 99%

“…, where u k,n (x, y) is the nth miniband formed by the antidot lattice. We model the triangular antidot lattice potential GaAs/In x Ga 1−x As/GaAs PQWs [40,41], as plotted in Fig. 2(a).…”

Section: Effective Hamiltonian and Quantum Spin Hall Statesmentioning

confidence: 99%

See 3 more Smart Citations

Artificial Gauge Field and Topological Phase in a Conventional Two-dimensional Electron Gas with Antidot Lattices

Shi

Lou

Cheng

et al. 2015

Sci Rep

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Based on the Born-Oppemheimer approximation, we divide the total electron Hamiltonian in a spin-orbit coupled system into the slow orbital motion and the fast interband transition processes. We find that the fast motion induces a gauge field on the slow orbital motion, perpendicular to the electron momentum, inducing a topological phase. From this general designing principle, we present a theory for generating artificial gauge field and topological phase in a conventional two-dimensional electron gas embedded in parabolically graded GaAs/InxGa1−xAs/GaAs quantum wells with antidot lattices. By tuning the etching depth and period of the antidot lattices, the band folding caused by the antidot potential leads to the formation of minibands and band inversions between neighboring subbands. The intersubband spin-orbit interaction opens considerably large nontrivial minigaps and leads to many pairs of helical edge states in these gaps.

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“…We consider the 2DEG in a GaAs/In x Ga 1− x As/GaAs parabolically graded QW, which was fabricated successfully before 38 39 40 , with a triangular antidot lattice (see Fig. 1(a) .…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Effective Hamiltonian and Quantum Spin Hall Statesmentioning

confidence: 99%

“…, where u k,n (x, y) is the nth miniband formed by the antidot lattice. We model the triangular antidot lattice potential GaAs/In x Ga 1−x As/GaAs PQWs [40,41], as plotted in Fig. 2(a).…”

Section: Effective Hamiltonian and Quantum Spin Hall Statesmentioning

confidence: 99%

See 2 more Smart Citations

Artificial Gauge Field and Topological Phase in a Conventional Two-dimensional Electron Gas with Antidot Lattices

Shi

Lou

Cheng

et al. 2015

Sci Rep

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Multicolor photodetector based on GaAs quantum rings grown by droplet epitaxy

Shao

et al. 2009

Applied Physics Letters

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Photoresponse from multicolor photodetector was measured in the spectral range of 0.4–6.0μm as a function of temperature and bias voltage. Devices were fabricated from wafers with an active region of five periods of GaAs quantum rings grown by droplet epitaxy technique on lattice matched Al0.3Ga0.7As barriers. The photoresponse spectra exhibit two broad bands in the visible-near-infrared and midinfrared spectral regions. The visible-near-infrared band, which is due to interband transitions, was observed at temperatures as high as room temperature. On the other hand, the midinfrared band, which is due to intersubband transitions, was observed at temperature lower than 80K.

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Quantum dots-in-a-well infrared photodetectors grown by MOCVD

Jolley

Tan

et al. 2006

2006 International Conference on Nanoscience and Nanotechnology

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Broad-band photoresponse from InAs quantum dots embedded into InGaAs graded well

Cited by 4 publications

References 6 publications

Artificial Gauge Field and Topological Phase in a Conventional Two-dimensional Electron Gas with Antidot Lattices

Artificial Gauge Field and Topological Phase in a Conventional Two-dimensional Electron Gas with Antidot Lattices

Multicolor photodetector based on GaAs quantum rings grown by droplet epitaxy

Quantum dots-in-a-well infrared photodetectors grown by MOCVD

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