Broad-Band Noise Mechanisms and Noise Measurements of Metal Semiconductor Junctions

Local noise analysis of a Schottky contact: Combined thermionic-emission–diffusion theory

“…Figure 12 clearly shows that both functions deviate significantly starting from the voltage VϷ10k B T/q (JϷ10 Ϫ2 ) when the series effects starts to appear. A similar behavior has been observed in some experiments, 6 where the noise temperature was found to deviate from the equivalent circuit results ͑without the cross term͒ precisely as shown in Fig. 12.…”

“…Furthermore, we show that the equivalent noise circuit previously reported for these contacts [5][6][7] can be obtained as a limit of our model in some particular limiting cases. The a͒ Electronic mail: gabriel@ffn.ub.es equivalent-circuit parameters, such as the junction resistance, the series resistance, etc., acquire closed analytical formulas valid in the whole range of voltages including the crossover between the shot noise and thermal noise limits.…”

“…[2][3][4] In recent years, however, special attention has been paid to the characterization of the noise properties of Schottky barrier diodes. [5][6][7][8] The main approach currently used to interpret the experimental noisemeasurement results is the phenomenological equivalent noise circuit technique. [5][6][7] Under this approach the diode is characterized by means of the corresponding equivalent circuit.…”

“…[5][6][7][8] The main approach currently used to interpret the experimental noisemeasurement results is the phenomenological equivalent noise circuit technique. [5][6][7] Under this approach the diode is characterized by means of the corresponding equivalent circuit. Hence, by associating each resistive element of the circuit with different noise sources ͑shot noise for the junction resistance, thermal noise for the series resistance, etc.͒ the total noise of the device is evaluated.…”

Effects of the epitaxial layer thickness on the noise properties of Schottky barrier diodes

“…9,12 Sometimes, to explain some of the excess noise observed experimentally, other noise sources due to hot electrons, intervalley scattering, trapping, etc., are introduced in the same phenomenological scheme. 3,10,11,13 However, for very thin epitaxial layers, the division between series and junction resistances loses its meaning, since the depletion layer extends over all the diode. In such a case, the combined effect of the diode size and the nonideality of the back ohmic contact may become relevant, and the phenomenological theories may not apply.…”