Brillouin scattering study of ZnO

Azuhata, T.; Takeuchi, Masaki; Yagi, T.; Shikanai, A.; Chichibu, S. F.; Torii, K.; Nakamura, Atsushi; Sota, Takayuki; Cantwell, G.; Eason, D. B.; Litton, C. W.

doi:10.1063/1.1586466

Cited by 71 publications

(25 citation statements)

References 14 publications

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“…From Fig. 1(a) we obtained the ratio of the elastic constants (2C 13 /C + 33) to be 0.99684, which is in good accordance with 1.0568 [24], 1.0165 [25], 1.0095 [26], and 0.91837 [27], experimentally and theoretically. The internal parameter u obviously shows a different strain behavior than the lattice constant c, it changes in the opposite way to the ratio of the lattice constants.…”

Section: The Electronic Properties Under Strainssupporting

confidence: 64%

Electronic and optical properties of ZnO thin film under in-plane biaxial strains: Ab initio calculation

Gai¹,

Ye²,

Lu³

et al. 2007

Physics Letters A

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Section: The Electronic Properties Under Strainssupporting

confidence: 64%

Electronic and optical properties of ZnO thin film under in-plane biaxial strains: Ab initio calculation

Gai¹,

Ye²,

Lu³

et al. 2007

Physics Letters A

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“…ZnO is such that c 11 − c 12 < c 13 [22]: for an isotropic lattice mismatch, the Poisson effect prevails in the in-plane strain. ZnO cores are often associated to a strongly mismatched shell and in this case the structure is no more coherent.…”

Section: Zno Nanowiresmentioning

confidence: 99%

Strain in crystalline core-shell nanowires

Ferrand

Cibert

2014

Eur. Phys. J. Appl. Phys.

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Abstract. We propose a comprehensive description of the strain configuration induced by the lattice mismatch in a core-shell nanowire with circular cross-section, taking into account the crystal anisotropy and the difference in stiffness constants of the two materials. We use an analytical approach which fully exploits the symmetry properties of the system. Explicit formulae are given for nanowires with the wurtzite structure or the zinc-blende structure with the hexagonal/trigonal axis along the nanowire, and the results are compared to available numerical calculations and experimental data on nanowires made of different III-V and II-VI semiconductors. The method is also applied to multishell nanowires, and to core-shell nanowires grown along the 0 0 1 axis of cubic semiconductors. It can be extended to other orientations and other crystal structures.

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“…This directly measured scaling behavior does not only nicely match the order of the hydrostatic pressure dependencies of the shear elastic constants in ZnO, GaN, and AlN [48] but also their absolute values that scale from e.g. 40, over 123, towards 131 GPa for C 66 [32,49,50]. Hence, while the wurtzite crystal structure is stiffening in regard to shear forces from ZnO, over GaN, towards AlN, the overall sensitivity to stress applied perpendicular to the c-axis is naturally decreasing as expressed by the rather small absoluteã value of AlN.…”

Section: −(2ã +B)mentioning

confidence: 66%

Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements

et al. 2014

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We studied bulk crystals of wurtzite AlN by means of uniaxial pressure-dependent Raman measurements. As a result, we derive the phonon pressure coefficients and deformation potentials for all zone center optical phonon modes. For the A1 and E1 modes we further experimentally determined the uniaxial pressure dependence of their longitudinal optical -transverse optical (LO-TO) splittings. Our experimental approach delivers new insight into the large variance among previously reported phonon deformation potentials, which are predominantly based on heteroepitaxial growth of AlN and the ball-on-ring technique. Additionally, the measured phonon pressure coefficients are compared to their theoretical counterparts obtained by density functional theory implemented in the SIESTA package. Generally, we observe a good agreement between the calculated and measured phonon pressure coefficients but some particular Raman modes exhibit significant discrepancies similar to the case of wurtzite GaN and ZnO, clearly motivating the presented uniaxial pressure-dependent Raman measurements on bulk AlN crystals.

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Brillouin scattering study of ZnO

Cited by 71 publications

References 14 publications

Electronic and optical properties of ZnO thin film under in-plane biaxial strains: Ab initio calculation

Electronic and optical properties of ZnO thin film under in-plane biaxial strains: Ab initio calculation

Strain in crystalline core-shell nanowires

Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements

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