Brillouin scattering study in the GaN epitaxial layer

Takagi, Yasunari; Ahart, Muhtar; Azuhata, T.; Sota, Takayuki; Suzuki, Kazuya; Nakamura, Shuji

doi:10.1016/0921-4526(95)00807-1

Cited by 66 publications

(33 citation statements)

References 8 publications

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“…[4][5][6][7][8][9][10][11][12] For relaxed GaN and AlN, the piezoelectric polarization is negligible. 13 (However, this component of the polarization depends on the strain of the crystal and may vary with growth method, substrate material, or temperature).…”

Section: Introductionmentioning

confidence: 99%

Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States

Eller

Yang

Nemanich

2014

Journal of Elec Materi

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Section: Introductionmentioning

confidence: 99%

Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States

Eller

Yang

Nemanich

2014

Journal of Elec Materi

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“…In this reference, a way is proposed to define an anisotropy factor coefficient for any crystal symmetry. In the present work, using the constants of [16][17][18][19][28][29][30], the values are found between 1.27 and 1.78. These two values correspond to the constants mentioned in [19] and [17], respectively.…”

Section: Application To Ganmentioning

confidence: 78%

“…For instance, taking //-a and a dislocation direction in the prismatic plane (a, c), a systematic equilibrium angle eq can be obtained. In Table 1, this angle is mentioned for each set of constants given in [16][17][18][19][28][29][30] including isotropic approximation. The comparison of columns 8 and 9 shows a small anisotropic effect since eq changes from averages equal to 2.5 ∘ (free surface, column 8) to 3.7 ∘ (no free surface, column 9).…”

Section: Application To Ganmentioning

confidence: 99%

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Threading Dislocations Piercing the Free Surface of an Anisotropic Hexagonal Crystal: Review of Theoretical Approaches

Neily

Dhouibi

Bonnet

2018

Advances in Condensed Matter Physics

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Inclined threading dislocations (TDs) piercing the oriented free surface of a crystal are currently observed after growth of oriented thin films on substrates. Up to date the unique way to treat their anisotropic elastic properties nearby the free surface region is to use the integral formalism, which assumes no dislocation core size and needs numerical double integrations. In a first stage of the work, a new and alternative approach to the integral formalism is developed using double Fourier series and the concept of a finite core size, which is often observed in high-resolution transmission electron microscopy. In a second stage, the integral formalism and the Fourier series approaches are applied to the important case of a TD piercing the basal free surface of a hexagonal crystal. For this particular geometry, easy-to-use expressions are derived and compared to a third approach previously known for a plate-like crystal. Finally, the numerical interest and the convergence of these approaches are tested using the basal free surface of the GaN compound, in particular for TDs with Burgers vectors c and (a + c).

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“…There are large discrepancies between different theoretical and experimental data sets. We use calculated values for GaN and InN obtained by Wright [7], which agree well with experimental data for GaN by Polian et al [8] and Takagi et al [9]. The elastic constants for GaInN are linearly interpolated between the binary endpoints.…”

Section: Methodsmentioning

confidence: 88%

Influence of growth kinetics on the indium distribution during MOVPE growth of GaInN quantum wells

Hahn¹,

Rosenauer²,

Gerthsen³

et al. 2003

phys. stat. sol. (c)

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The composition and thickness of GaInN quantum wells (QWs) determines the luminescence properties of GaInN/GaN-based optoelectronic devices. The In distribution is characterized by considerable inhomogeneities on two spatial scales. Variations of locally averaged In concentrations and QW thickness on a "large" scale of several 10 nm along the QW occur in addition to small clusters with high In concentrations up to 100% and sizes of only a few nanometers. In the present work, we investigated the influence of the growth rate during metal organic vapor phase epitaxy (MOVPE) growth on the In distribution. The composition of GaInN single QWs was determined by evaluating high-resolution transmission electron microscopy (HRTEM) lattice-fringe images. At low GaInN deposition rates, a significant increase of the inhomogeneity of the In distribution compared to a sample grown with a high rate was found. A good correlation between experimental and calculated photoluminescence energies is achieved. 1 Introduction Enormous progresses regarding the growth of group-III nitrides by metalorganic vapor phase epitaxy (MOVPE) were achieved in the past years and commercial GaInN-based light emitting diodes (LEDs) and laser diodes (LDs) have been realised [1]. However, the effect of different mechanisms -phase separation, In segregation and In desorption -during the epitaxial growth of GaInN quantum wells (QWs) are still not understood well enough to control precisely the In distribution. GaInN QWs have been shown to contain pronounced composition fluctuations, in particular small In-rich clusters (<5 nm) [2,3], which can be attributed to phase separation due to the large miscibility gap of InGaN [4]. These In-rich clusters have been suggested to dominate the photoluminescence (PL) of InGaN QWs by acting as quantum dots by O'Donnell et al. [5]. With respect to the development of LDs in the blue/green spectral range, which can be achieved in principle by structures containing quantum dots with suitable size and In concentration, a good understanding of the effects dominating the growth mode, the average composition and In distribution in GaInN QWs is required. In the present work, the influence of the growth rate during MOVPE growth on the In distribution of GaInN single QWs was investigated. The measured In concentrations and QW thicknesses were correlated with room-temperature PL spectra.

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Brillouin scattering study in the GaN epitaxial layer

Cited by 66 publications

References 8 publications

Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States

Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States

Threading Dislocations Piercing the Free Surface of an Anisotropic Hexagonal Crystal: Review of Theoretical Approaches

Influence of growth kinetics on the indium distribution during MOVPE growth of GaInN quantum wells

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