Bright luminance from silicon dioxide film with carbon nanotube electron beam exposure

Lee, Su Woong; Hong, Ji Hye; Kang, Jung Su; Callixte, Shikili; Park, Kyu Chang

doi:10.1016/j.jlumin.2015.10.060

Cited by 8 publications

(2 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Alignment could prevent CNT damages from electric arc and reduce the gate current of electrons by the directed electric field between the mesh wire and the CNT emitters. 14) The gate current ratio (the percentage of gate current to cathode current) depends on the offset width between the distance of the CNT island and the mesh wire. For a low gate current ratio and high anode emission current, the area of the CNT island was designed as 200 × 200 μm 2 with the pitch of the CNT island-to-island of 500 μm.…”

Section: Electron Beam With a Triode Structurementioning

confidence: 99%

“…However, for high-power devices, many challenges should be overcome with the cold cathode electron source. For the market penetration of high-power devices such as X-ray lamps, [6][7][8][9][10][11] the structure modification process, [12][13][14] visible lightbulb, 15,16) micro-columns 17) and UV lamps, 18,19) we need a triode structure [20][21][22][23] electron beam with CNT emitters as the electron sources. The cold cathode electron beam requires an electron extraction gate mesh electrode.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The effect of gate mesh electrode strain on performance of cold cathode electron beam

Kang¹,

Yoo²,

Ihm³

et al. 2019

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

The effect of an electron extraction electrode on electron emission was studied, in particular, the effect of the strain of a gate electrode for high-performance cold cathode electron beam fabrication. For the cold cathode electron beam with carbon nanotube emitters, the structure of a gate grid mesh electrode was one of the most important components. Gate current through the grid mesh was a serious hurdle to be overcome. When gate current is high, the electron emission current could be saturated, even if the gate bias is increased. To overcome this phenomenon, the structure of the gate electrode was optimized. By using a lower strain gate mesh structure with low-cost SUS304 material, we could reduce the gate current ratio from 17% to 8.4%. Finally, we could increase the electron emission current from 0.6 to 2.3 mA and current density from 40 to 202 mA cm−2, with a gate mesh with 77 μm strain in 1.5 N weight load.

show abstract

Section: Electron Beam With a Triode Structurementioning

confidence: 99%