Bridging the gap between atomically thin semiconductors and metal leads

Cai, Xiangbin; Wu, Zefei; Han, Xu; Xu, Shuigang; Lin, Jiangxiazi; Han, Tianyi; He, Pingge; Feng, Xuemeng; An, Liheng; Shi, Run; Wang, Jingwei; Ying, Zhehan; Cai, Yuan; Hua, Mengyuan; Liu, Junwei; Pan, Ding; Cheng, Chih‐Yung; Wang, Ning

doi:10.1038/s41467-022-29449-4

Cited by 24 publications

(26 citation statements)

References 40 publications

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“…Recently, as shown in Figure 6h, Cai et al reported an atomically sharp edge interface between semiconducting and semimetallic MoS 2 . [102] The semi-metallic feature originates from the distorted octahedral structure of MoS 2 formed by a plasma treatment. The semi-metallicity and sharp interfacial edge without noticeable defects lead to an ideal and barrier-free electrical interface.…”

Section: Top-down Phase Engineeringmentioning

confidence: 99%

“…[21] TMD-based FETs also exhibited high mobility, high current density, and low R C with 1D edge contacts. [39,78,102] Such 2D FETs are expected to facilitate a 3D integration of vertically stacked multifunctional devices such as memory, logic, and sensor devices, with potential for usage in in-memory and in-sensor computing systems. [81] Further, the 1D edge contacts can lead to unique electrical features in FET device structures that have been challenging to achieve using typical top contacts, such as Fermi level depinning, immunity to contact scaling, and in-plane anisotropic transport.…”

Section: Device Applications With Edge Contactsmentioning

confidence: 99%

“…[189] Copyright 2017, IEEE. [102] n-type Gr edge contacts [79] Gr edge contacts [81] n-type Pt [198] Ni [198] Ti [198] Sc [198] n-type 0.1 Ni-etched-Gr [199] Ni-Gr [199] Ni [199] n Au [200] Ti [200] Ni [200] n-type 0. 1L-hBN/Co [201] Ti/MoSe Gr/Ag [203] Gr/Ti [204] n-type Bi [20] n-type 0.123 0 55 1135 Table 3.…”

Section: Challenges Of Edge Contactmentioning

confidence: 99%

“…The high surface sensitivity and limited edge dimensions of 2D semiconductors also limit R C in edge-contacted devices due to the formation of oxide/alloy during the etching process. [190] Thus, the highest I drive and the R C of 1D [21,[56][57][58]60,61,63,64,126,[205][206][207][208] b-d) Comparison for 1D and 2D contacts in terms of R C (b), [8][9][10][11][12][15][16][17][18][19][20]26,39,[42][43][44]78,79,81,89,100,102,103,117,119,120,196,[198][199][200][201][202][203][204] I drive as a function of SBH (c), …”

Section: Summary and Issuesmentioning

confidence: 99%

“…h) Local bonding distortion by soft O 2 plasma treatment to realize atomically sharp 1D edge contacts. Reproduced under the terms of the CC-BY Creative Commons Attribution 4.0 International license (https://creativecommons.org/licenses/by/4.0/) [102]. Copyright 2022, The Authors, published by Springer Nature.…”

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confidence: 99%

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Recent Progress in 1D Contacts for 2D‐Material‐Based Devices

et al. 2022

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It is therefore becoming increasingly important to analyze the electronic properties of nanometer scale semiconductors from the quantum mechanical perspective. Due to their atomic thickness, 2D materials (2DMs) are considered to be the best candidates for revealing the quantum mechanical properties when used as semiconducting channel materials in electronic devices, thus representing alternatives to the conventional semiconducting materials such as Si and GaAs. [1] However, the use of 2DMs leads to large contact resistance (R C ) when they are in contact with metallic electrodes, since they form a metallic interface that depends on van der Waals (vdW) bonding, which induces the vdW gap and generates metalinduced gap states, ultimately resulting in Fermi-level pinning (FLP). [2,3] As a result, the electronic mobility of the metal-contacted 2DM based devices is found to be much lower than the theoretically expected value, thus preventing their quantum properties from being observed. Therefore, minimizing the R C of the devices using 2DMs represents the most important challenge for exploring the novel quantum electronic properties of the devices. In this regard, there have been substantial efforts to reduce the R C by using novel contact strategies. [4,5] Clean vdW contacts either by transferring metal/ semimetal electrodes or depositing indium on 2D semiconductors have been proposed to obtain high-quality metal-semiconductor (MS) interfaces without generating metallization induced defects. [6][7][8][9][10][11] High density doping achieved by chemical dopants, substitutional doping, solid oxides, and semimetals has also been utilized to reduce the R C significantly. [12][13][14][15][16][17][18][19][20] However, such contacts were typically placed onto the vdW surface of 2D semiconductors resulting in the formation of vdW tunneling barriers as well as the limitation in lateral scaling of the devices. Here, the 1D edge contact methods have been studied intensively as a very suitable technique for achieving a vdW gap-free electrical contact in scaled 2D devices.Edge-contacted 2D devices were first demonstrated for the purpose of suppressing scattering from the surface of 2DMs by encapsulating graphene with 2D hBN. [21] Following this initial report, the 1D edge contact method became more widely employed due to its additional advantages in the operation of 2D devices: the realization of Fermi-level depinning Recent studies have intensively examined 2D materials (2DMs) as promising materials for use in future quantum devices due to their atomic thinness. However, a major limitation occurs when 2DMs are in contact with metals: a van der Waals (vdW) gap is generated at the 2DM-metal interfaces, which induces metal-induced gap states that are responsible for an uncontrollable Schottky barrier (SB), Fermi-level pinning (FLP), and high contact resistance (R C ), thereby substantially lowering the electronic mobility of 2DMbased devices. Here, vdW-gap-free 1D edge contact is reviewed for use in 2D devices with substantially su...

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Section: Top-down Phase Engineeringmentioning

confidence: 99%

Section: Device Applications With Edge Contactsmentioning

confidence: 99%

Section: Challenges Of Edge Contactmentioning

confidence: 99%

Section: Summary and Issuesmentioning

confidence: 99%

mentioning

confidence: 99%

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Recent Progress in 1D Contacts for 2D‐Material‐Based Devices

et al. 2022

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Revealing Intrinsic Superconductivity of the Nb/BiSbTe₂Se Interface

Kudriashov

Babich

Hovhannisyan

et al. 2022

Adv Funct Materials

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Typically, topological superconductivity is reachable via proximity effect by a direct deposition of superconductor (S) on top of a topological insulator (TI) surface. Here, the double critical current in the Josephson junctions based on the topological insulator is observed in the fabricated planar Superconducting Quantum Interference Devicea. By measuring critical currents as a function of temperature and magnetic field, it is shown that the second critical current stems from the intrinsic superconductivity of the S–TI interface, which is supported by the modified Resistively Shunted Junction model and Transmission Electron Microscopy studies. This complex structure of the interface should be taken into account when the technological process involves Ar‐plasma cleaning.

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Electronics and Optoelectronics Based on Tellurium

Zha,

Dong,

Huang

et al. 2024

Advanced Materials

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As a true 1D system, group‐VIA tellurium (Te) is composed of van der Waals bonded molecular chains within a triangular crystal lattice. This unique crystal structure endows Te with many intriguing properties, including electronic, optoelectronic, thermoelectric, piezoelectric, chirality, and topological properties. In addition, the bandgap of Te exhibits thickness dependence, ranging from 0.31 eV in bulk to 1.04 eV in the monolayer limit. These diverse properties make Te suitable for a wide range of applications, addressing both established and emerging challenges. This review begins with an elaboration of the crystal structures and fundamental properties of Te, followed by a detailed discussion of its various synthesis methods, which primarily include solution phase, and chemical and physical vapor deposition technologies. These methods form the foundation for designing Te‐centered devices. Then the device applications enabled by Te nanostructures are introduced, with an emphasis on electronics, optoelectronics, sensors, and large‐scale circuits. Additionally, performance optimization strategies are discussed for Te‐based field‐effect transistors. Finally, insights into future research directions and the challenges that lie ahead in this field are shared.

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Bridging the gap between atomically thin semiconductors and metal leads

Cited by 24 publications

References 40 publications

Recent Progress in 1D Contacts for 2D‐Material‐Based Devices

Recent Progress in 1D Contacts for 2D‐Material‐Based Devices

Revealing Intrinsic Superconductivity of the Nb/BiSbTe₂Se Interface

Electronics and Optoelectronics Based on Tellurium

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Bridging the gap between atomically thin semiconductors and metal leads

Cited by 24 publications

References 40 publications

Recent Progress in 1D Contacts for 2D‐Material‐Based Devices

Recent Progress in 1D Contacts for 2D‐Material‐Based Devices

Revealing Intrinsic Superconductivity of the Nb/BiSbTe2Se Interface

Electronics and Optoelectronics Based on Tellurium

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Revealing Intrinsic Superconductivity of the Nb/BiSbTe₂Se Interface