Breakthrough of selector technology for cross-point 25-nm ReRAM

Kim, Soo Gil; Lee, Jong Chul; Ha, Tae Jung; Lee, Jae Yeon; Park, Yong Taek; Kim, Kyung Wan; Ju, Won Ki; Ko, Young Seok; Hwang, Hyun Mi; Lee, Bo Mi; Moon, Joo Young; Park, Woo Young; Gyun, Byung Gu; Lee, Byoung-Ki; Yim, Donggyu; Hong, Seongin

doi:10.1109/iedm.2017.8268309

Cited by 16 publications

(2 citation statements)

References 5 publications

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“…A crucial method is optimizing the performance of the selector, which is expected to be CMOS compatibility, with a high driving current, a large selectivity, a small threshold voltage, and great endurance . Recently, the selectors based on oxide diodes have revealed a great potential in achieving a highly integrated memory array. − SK Hynix has demonstrated an innovative oxide selector As-included SiO 2 , which has achieved reliable threshold switching characteristics for cross-point memory . In this work, we investigated another common oxide material in the semiconductor industry, HfO 2 as a matrix oxide material, which is also one of the conventional dielectric materials.…”

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confidence: 99%

“…10−12 SK Hynix has demonstrated an innovative oxide selector As-included SiO 2 , which has achieved reliable threshold switching characteristics for cross-point memory. 13 In this work, we investigated another common oxide material in the semiconductor industry, HfO 2 as a matrix oxide material, which is also one of the conventional dielectric materials. Previous work has found that the threshold voltage (V th ) and leakage current can be controlled by As ions.…”

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confidence: 99%

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High Driving Current Selector Based on As-Implanted HfO₂ Thin Film for 3D Phase Change Memory

Wang

Guo

Yao

et al. 2021

ACS Appl. Electron. Mater.

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A large crossbar array is desirable for high-density 3D stacking phase change memory (PCM) applications, in which the leakage current is mainly decided by selector devices. Meanwhile, a large driving current is also needed to meet the Reset operation of the PCM cell. Here, we propose a selector based on a nanoscale HfO2 film via As ion implantation, which has a low threshold voltage of 1.9 V, a milliamp-scale high driving current, a large selectivity of 106, fast turn on speed, and good endurance (108 switching cycles). These excellent performances make it applicable in the high-density stacked PCM application.

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confidence: 99%

High Driving Current Selector Based on As-Implanted HfO₂ Thin Film for 3D Phase Change Memory

Wang

Guo

Yao

et al. 2021

ACS Appl. Electron. Mater.

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Effect of the Oxygen Composition Control of HfO_x Films on Threshold and Memory Switching Characteristics for Hybrid Memory Applications

Lee

Kim

et al. 2022

Adv Elect Materials

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Considering a high‐density vertical X‐point memory array, the film thickness of an active device for the selector and memory needs to be scaled down. Here, the authors propose an AgTe/HfOx‐based hybrid memory device with a film thickness of less than 10 nm by adopting a bilayer (HfO1.8/HfO2) film using precise composition control. Non‐volatile switching characteristics can be obtained by considering the formation of stable nanoscale Ag filaments in the nanoporous region in non‐stoichiometric HfO1.8 deposited via sputtering. By contrast, volatile switching characteristics are achieved by an unstable atomic‐scale Ag path in stoichiometric HfO2 deposited via plasma‐enhanced atomic layer deposition. Based on density functional theory calculations, it is confirmed that the stoichiometry of the HfOx film is the key parameter that controls the switching characteristics. The bilayer (HfO1.8/HfO2) device exhibits excellent hybrid memory characteristics, such as distinct read margin (>1.5 V), high ON/OFF ratio (>106), and extremely low OFF current (≈pA), for vertical X‐point memory applications.

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Mitigating set-stuck failure in 3D phase change memory: substituting square pulses with surge pulses

Li,

Cai,

Xiang

et al. 2024

Sci. China Inf. Sci.

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Breakthrough of selector technology for cross-point 25-nm ReRAM

Cited by 16 publications

References 5 publications

High Driving Current Selector Based on As-Implanted HfO₂ Thin Film for 3D Phase Change Memory

High Driving Current Selector Based on As-Implanted HfO₂ Thin Film for 3D Phase Change Memory

Effect of the Oxygen Composition Control of HfO_x Films on Threshold and Memory Switching Characteristics for Hybrid Memory Applications

Mitigating set-stuck failure in 3D phase change memory: substituting square pulses with surge pulses

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Breakthrough of selector technology for cross-point 25-nm ReRAM

Cited by 16 publications

References 5 publications

High Driving Current Selector Based on As-Implanted HfO2 Thin Film for 3D Phase Change Memory

High Driving Current Selector Based on As-Implanted HfO2 Thin Film for 3D Phase Change Memory

Effect of the Oxygen Composition Control of HfOx Films on Threshold and Memory Switching Characteristics for Hybrid Memory Applications

Mitigating set-stuck failure in 3D phase change memory: substituting square pulses with surge pulses

Contact Info

Product

Resources

About

High Driving Current Selector Based on As-Implanted HfO₂ Thin Film for 3D Phase Change Memory

High Driving Current Selector Based on As-Implanted HfO₂ Thin Film for 3D Phase Change Memory

Effect of the Oxygen Composition Control of HfO_x Films on Threshold and Memory Switching Characteristics for Hybrid Memory Applications