Breakdown voltage enhancement of vertical diamond Schottky barrier diodes by selective growth nitrogen-doped diamond field plate

Li, Qi; Wang, Juan; Chen, Genqiang; He, Shunping; Zhang, Qianwen; Zhang, Shumiao; Wang, Ruozheng; Fan, Shuwei; Wang, Hongxing

doi:10.1016/j.diamond.2023.109799

Diamond and Related Materials

2023

DOI: 10.1016/j.diamond.2023.109799

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Breakdown voltage enhancement of vertical diamond Schottky barrier diodes by selective growth nitrogen-doped diamond field plate

Qi Li

Juan Wang

Genqiang Chen

et al.

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2024

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Cited by 5 publications

References 26 publications

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High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

Liao,

Sun,

Koizumi

2024

Advanced Science

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Diamond holds the highest figure‐of‐merits among all the known semiconductors for next‐generation electronic devices far beyond the performance of conventional semiconductor silicon. To realize diamond integrated circuits, both n‐ and p‐channel conductivity are required for the development of diamond complementary metal‐oxide‐semiconductor (CMOS) devices, as those established for semiconductor silicon. However, diamond CMOS has never been achieved due to the challenge in n‐type channel MOS field‐effect transistors (MOSFETs). Here, electronic‐grade phosphorus‐doped n‐type diamond epilayer with an atomically flat surface based on step‐flow nucleation mode is fabricated. Consequently, n‐channel diamond MOSFETs are demonstrated. The n‐type diamond MOSFETs exhibit a high field‐effect mobility around 150 cm2 V−1 s−1 at 573 K, which is the highest among all the n‐channel MOSFETs based on wide‐bandgap semiconductors. This work enables the development of energy‐efficient and high‐reliability CMOS integrated circuits for high‐power electronics, integrated spintronics, and extreme sensors under harsh environments.

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High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

Liao,

Sun,

Koizumi

2024

Advanced Science

View full text Add to dashboard Cite

show abstract

Optimal design of pseudo-vertical Schottky diode with n-type junction terminal extension structure

Shang,

Jiang

2024

Diamond and Related Materials

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Diamond/SnO₂ Heterojunction p-n Diodes With Ion/off of 10⁸ and Breakdown Voltage Over 400 V

Zhang,

Wang,

Wen

et al. 2024

IEEE Electron Device Lett.

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Breakdown voltage enhancement of vertical diamond Schottky barrier diodes by selective growth nitrogen-doped diamond field plate

Cited by 5 publications

References 26 publications

High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

Optimal design of pseudo-vertical Schottky diode with n-type junction terminal extension structure

Diamond/SnO₂ Heterojunction p-n Diodes With Ion/off of 10⁸ and Breakdown Voltage Over 400 V

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