Breakdown of the Quantum Hall Effects in Hole Systems at High Induced Currents

Gething, J. D.; Matthews, A. J.; Usher, A.; Portnoi, M. E.; Kavokin, K. V.; Henini, M.

doi:10.1142/s0217979204026962

Cited by 7 publications

(4 citation statements)

References 9 publications

(11 reference statements)

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“…In further magnetometry investigations, on both electron systems [162,163] and hole systems [164,165], it became apparent that there are a number of surprising aspects to breakdown in contact-free geometries. First, the saturation magnetic moment m s (proportional to critical current) is higher in samples with lower mobilities.…”

Section: Breakdown Of the Qhementioning

confidence: 99%

Magnetometry of low-dimensional electron and hole systems

Usher¹,

Elliott²

2009

J. Phys.: Condens. Matter

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Abstract. The high magnetic field, low-temperature magnetic properties of lowdimensional electron and hole systems reveal a wealth of fundamental information. Quantum oscillations of the thermodynamic equilibrium magnetization yield the total density of states, a central quantity in understanding the quantum Hall effect in 2D systems. The magnetization arising from non-equilibrium circulating currents reveals details, not accessible with traditional measurements, of the vanishingly small longitudinal resistance in the quantum Hall regime. We review how the technique of magnetometry has been applied to these systems, the most important discoveries that have been made, and their theoretical significance.

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Section: Breakdown Of the Qhementioning

confidence: 99%

Magnetometry of low-dimensional electron and hole systems

Usher¹,

Elliott²

2009

J. Phys.: Condens. Matter

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“…Finally, the nonstationary currents were used as a valuable tool for contactless measurements of the breakdown currents in the QHE regime, of the charge and current distribution in the sample in the QHE regime, and also for estimating energy gaps in the electron spectrum [10,[251][252][253] -the issues, interesting for physics and important for the QHE metrology.…”

Section: Hysteresis Non-stationary Recharging Effects In the Qhe Regimementioning

confidence: 99%

Measurements of the magnetic properties of conduction electrons

Pudalov

2021

Phys.-Usp.

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We consider various methods and techniques for measuring electron magnetization and susceptibility, which are used in experimental condensed matter physics. The list of considered methods for macroscopic measurements includes magnetomechanic, electromagnetic, modulation-type, and also thermodynamic methods based on the chemical potential variation measurements. We also consider local methods of magnetic measurements based on the spin Hall effects, NV-centers. Several scanning probe magnetometers-microscopes are considered, such as magnetic resonance force microscope, SQUID-microscope, and Hall microscope. The review focuses on the spin magnetization measurements of electrons in non-magnetic materials and artificial systems, particularly, in lowdimensional electron systems in semiconductors and in nanosystems, which came to the forefront in recent years.

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“…[4][5][6] Besides the importance of such a structure for several technological applications, n-doped or p-doped AQWs are quite useful in the study of fundamental aspects regarding the properties of 2D electron gas ͑2DEG͒ or 2D hole gas ͑2DHG͒. Fundamental aspects, such as many body effects, 4 quantum Hall effect, 7 and Fermi-edge singularity, 8 depend upon the 2DCG density. The key point related to the AQW structures, making them unique material systems for the investigation of fundamental aspects, is the possibility of continuously varying the 2DCG density from its maximum value under dark condition down to zero value under strong optical excitation.…”

Section: Influence Of the Optical Control In The Lateral Transport Ofmentioning

confidence: 99%

Influence of the optical control in the lateral transport of carriers in InGaAs∕GaAs one-side modulation-doped quantum wells

Cunha

Silva

Morais

et al. 2007

Journal of Applied Physics

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Experimental evidence of asymmetric carrier transport in InGaAs quantum wells and wires grown on tilted InP substrates Appl.The effects of optically exciting n-type and p-type one-side modulation-doped InGaAs/ GaAs quantum well structures were investigated by scanning the photoluminescence intensity profile on the sample's surface. An undoped quantum well was used as reference. Photoluminescence and carrier diffusion length measurements were carried out at increasing optical excitation densities. We found that the excitation density dependence of the carrier diffusion length in doped samples is quite different from that of the undoped sample. This difference is discussed in terms of the reduction of band bending/band-gap renormalization and carrier lifetime change due to the reduction of the two-dimensional carries gas density inside the quantum well upon intense laser illumination.

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Breakdown of the Quantum Hall Effects in Hole Systems at High Induced Currents

Cited by 7 publications

References 9 publications

Magnetometry of low-dimensional electron and hole systems

Magnetometry of low-dimensional electron and hole systems

Measurements of the magnetic properties of conduction electrons

Influence of the optical control in the lateral transport of carriers in InGaAs∕GaAs one-side modulation-doped quantum wells

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