GaAs/AlGaAs quantum dots grown by in situ droplet etching and nanohole infilling offer a combination of strong charge confinement, optical efficiency, and spatial symmetry required for polarization entanglement and spin-photon interface. Here we study spin properties of such dots. We find nearly vanishing electron g-factor (g e < 0.05), providing a route for electrically driven spin control schemes. Optical manipulation of the nuclear spin environment is demonstrated with nuclear spin polarization up to 60% achieved. NMR spectroscopy reveals the structure of two types of quantum dots and yields the small magnitude of residual strain ε b < 0.02% which nevertheless leads to long nuclear spin lifetimes exceeding 1000 s. The stability of the nuclear spin environment is advantageous for applications in quantum information processing.Central spin in semiconductor quantum dots is a prime candidate for applications in quantum information technologies. 1,2 It is relatively isolated from the solid state effects and at the same time is accessible for coherent manipulation and can be interfaced optically. The coherence in this system is mainly limited by the hyperfine coupling with the nuclear spin bath. 3,4 Single spin qubit manipulation in these structures, therefore, demands an auxiliary control over nuclear spin environment. Such control can be realized by maximizing polarization of 10 4 − 10 5 nuclei in a single quantum dot, 5-7 enabling the formation of well-defined nuclear spin states and in effect reducing the influence of the nuclear field fluctuations. 8,9 Central spin manipulation in semiconductor quantum dot (QD) system using resonant ultrafast optical pulses 10,11 has been demonstrated but scalability in such schemes is challenging. An alternative approach is to induce controlled spin rotation by manipulating the coupling to the external magnetic field. 12 This can be achieved by electrical modulation of the g-factor. However, such scheme critically depends on the ability to change the sign of g, thus requiring quantum dots with close to zero electron or hole g-factor. 13,14 Self-assembled InGaAs/GaAs QD has been the primary system of choice for spin studies over the last two decades, as quantum confinement in monolayer-fluctuation GaAs/AlGaAs dots is too weak. Only recently the potential of droplet epitaxial (DE) grown GaAs QDs has been identified. [15][16][17] In particular nanohole-filled droplet epitaxial (NFDE) dots formed by in situ etching and nanohole infilling 18 provide confinement and excellent optical efficiency, while on the other hand exhibiting high symmetry not achievable previously in self-assembled dots. 19 Such unique com-1 arXiv:1507.06553v1 [cond-mat.mes-hall]