Breakdown of the integer quantum Hall effect studied by Corbino discs

Yokoi, Masahide; Okamoto, Tohru; Kawaji, Shinji; Goto, Takayuki; Fukase, T.

doi:10.1016/s0921-4526(98)00074-x

Cited by 15 publications

(10 citation statements)

References 7 publications

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“…The observed temperature dependence and lack of an ohmic regime at the lowest temperatures is highly consistent with our previous measurements on Hall bar devices [18]. voltage characteristic, various criteria have been used to define where breakdown begins [29,30,[34][35][36]. Here we define the critical breakdown voltage V c as the source-drain voltage at which σ xx = 5e −4 e 2 /h, which roughly corresponds to the dis-sipation measured in each device when the differential conductivity reaches its peak value at breakdown (Fig.…”

Section: Source-drain Voltage Dependencesupporting

confidence: 88%

“…The qualitative and quantitative consistency of breakdown phenomenology between the two device geometries confirms that breakdown occurs through bulk conduction. This finding echoes studies of QH breakdown incorporating Corbino devices, in which breakdown has been found to be an intrinsic property of the electron system [28][29][30]43].…”

Section: At and Above Breakdownsupporting

confidence: 78%

“…across the annulus that is most relevant for breakdown, at least for the two Corbino geometries used here. The extent to which this finding holds in general for QAH Corbino disks will be the topic of future work; the limited literature on breakdown in QH Corbino geometries does not show this [28,29,37].…”

Section: Source-drain Voltage Dependencementioning

confidence: 93%

“…In the Corbino geometry, no edges connect the source and drain contacts, eliminating edge contributions from conduction measured with transport. While insensitive to the Hall voltage, transport in Corbino devices is an intensive measurement of the bulk conductivity σ xx , which is invaluable when studying dissipation in systems exhibiting topological edge transport [28][29][30][31].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Bulk dissipation in the quantum anomalous Hall effect

Rodenbach,

Rosen,

Fox

et al. 2021

Preprint

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Even at the lowest accessible temperatures, measurements of the quantum anomalous Hall (QAH) effect have indicated the presence of parasitic dissipative conduction channels. There is no consensus whether parasitic conduction is related to processes in the bulk or along the edges. Here, we approach this problem by comparing transport measurements of Hall bar and Corbino geometry devices fabricated from Cr-doped (BiSb) 2 Te 3 . We identify bulk conduction as the dominant source of dissipation at all values of temperature and in-plane electric field. Furthermore, we observe identical breakdown phenomenology in both geometries, indicating that breakdown of the QAH phase is a bulk process. The methodology developed in this study could be used to identify dissipative conduction mechanisms in new QAH materials, ultimately guiding material development towards realization of the QAH effect at higher temperatures.

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Section: Source-drain Voltage Dependencesupporting

confidence: 88%

Section: At and Above Breakdownsupporting

confidence: 78%

Section: Source-drain Voltage Dependencementioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

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Bulk dissipation in the quantum anomalous Hall effect

Rodenbach,

Rosen,

Fox

et al. 2021

Preprint

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“…positive feedback where increase in input power increases conductance that in turn increases power dissipation, would be one option 21 . The critical field E c has been found to scale approximately linearly with the magnetic field and the largest electric field reported for E c amounts to kV/m at 9 T 27 (see the analysis and compilation in ref. 25 for filling factors ν = 2, 4, 6).…”

Section: Discussionmentioning

confidence: 99%

Gyrotropic Zener tunneling and nonlinear IV curves in the zero-energy Landau level of graphene in a strong magnetic field

Laitinen

Kumar

Hakonen

et al. 2018

Sci Rep

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We have investigated tunneling current through a suspended graphene Corbino disk in high magnetic fields at the Dirac point, i.e. at filling factor ν = 0. At the onset of the dielectric breakdown the current through the disk grows exponentially before ohmic behaviour, but in a manner distinct from thermal activation. We find that Zener tunneling between Landau sublevels dominates, facilitated by tilting of the source-drain bias potential. According to our analytic modelling, the Zener tunneling is strongly affected by the gyrotropic force (Lorentz force) due to the high magnetic field.

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Magnetotransport effects in semiconductors

Pinto

Murri

2002

Handbook of Thin Films

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Breakdown of the integer quantum Hall effect studied by Corbino discs

Cited by 15 publications

References 7 publications

Bulk dissipation in the quantum anomalous Hall effect

Bulk dissipation in the quantum anomalous Hall effect

Gyrotropic Zener tunneling and nonlinear IV curves in the zero-energy Landau level of graphene in a strong magnetic field

Magnetotransport effects in semiconductors

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