Breakdown conduction in thin dielectric films: A bibliographical survey

Agarwal, Varsha

doi:10.1016/0040-6090(74)90251-x

Cited by 19 publications

(9 citation statements)

References 217 publications

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“…Reviews during 1974 treated thin film breakdown (50) and laser-induced damage (55,56), A symposium on treeing phenomena was held during the 1973 Conference on Electrical Insulation and Dielectric Phenomena.…”

Section: Introductionmentioning

confidence: 99%

Dielectric breakdown in solids

Budenstein

1974

Digest of Literature on Dielectrics Volume 38 1974

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Section: Introductionmentioning

confidence: 99%

Dielectric breakdown in solids

Budenstein

1974

Digest of Literature on Dielectrics Volume 38 1974

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“…[ _,/2,a/-T ]()1/2 ," 3 'eff. 1 Fs (6.4) This relation evidently shows the dependence of the breakdown field on specimen thickness and has been shown to explain the experimental data for various inorganic dielectrics by Budenstein and co-workers 06-o8 and for Langmuir films by Agarwal and Srivastaval o 9,1 10. It has been discussed further by F-M that if the electron injection takes place at the negative electrode and the effective height of the potential barrier is very low, the thickness dependence of F is expressed as Fn c d-]4.…”

Section: J 16rr2hmentioning

confidence: 63%

“…6.1. 1 Forlani-Minna]a (F-M) Theory A fact not considered in the earlier proposed models was the origin of the charge carders in an insulator; F-M in their theory assumed that these are injected from the cathode into the insulator by field emission and are then multiplied by impact ionization. Thus, considering the consequence of avalanche multiplication of Fowler-Nordheim emission7, the injected current density Jeath Can be written…”

Section: Electronic Breakdown Theoriesmentioning

confidence: 99%

Electrical Behaviour of Langmuir Films: A Review, Part II

Agarwal

1974

Active and Passive Electronic Components

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The electrical behaviour of thin films obtained by a variety of processes, e.g. thermal evaporation in vacuum, has been extensively studied. The study of organic mono- and multilayer films obtained by the Blodgett–Langmuir technique (commonly referred to as Langmuir films), however, has gained considerable momentum only during the past decades. Unlike evaporated films, the stiking features of these organic films are their controllable thicknesses down to one monolayer (~25 Å) and the possibility of obtaining them free from holes and conducting imperfections. The aim of this paper is to describe the film deposition techniques, some of the properties of the films so obtained and to review their electrical behaviour. It is also intended to make this review a comprehensive and up-to-date source of information for those who are either already engaged in this field or are planning to adopt Langmuir films for future investigations.In this survey, emphasis is put on the possible problems worth further study to get more insight into the basic properties of these films. Further, since the latter possess some interesting electrical properties, this paper may prove useful in the assessment of our depth of knowledge about them and in reducing the existing gap between basic research and technological applications. Their potential usefulness in developing devices is therefore also discussed.The survey has been divided into two parts. Part I was concerned with deposition techniques, the physical properties of Langmuir films and certain electrical properties, namely dielectric behaviour and electrical conduction phenomena. This second part is concerned with electrical breakdown behaviour, voltage induced changes in electrical behaviour (forming) and ionic transport phenomena in the films and finishes, with suggestions as to future trends in work with such films together with a summary of possible applications.To assist the reader, the two parts have been numbered consecutively with regard to sections of the text, figures and references. “Appropriate” references already cited in Part I are given again at the end of this part.

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“…The processes leading to the classes of behaviour in (2) and (3) will each be discussed in more detail and the properties of the formed states reviewed. OABC Although prolonged operation in air usually causes degradation of the device, s' 7 The electroformed structure can be used as an analog memory as described by Simons and Verderber.…”

Section: Formingmentioning

confidence: 99%

“…Such sandwiches can be made to exhibit voltage-controlled negative resistance (VCN R), current-controlled negative resistance (CCNR), threshold switching, analog memory switching, bistable memory switching and other potentially useful electrical effects. These properties have been reviewed by Dearnaley et al and a later bibliography listed by Agarwal 2 includes some references to switching phenomena. Further papers have appeared since these articles were written and the literature of these effects is now quite extensive.…”

Section: Introductionmentioning

confidence: 99%

Electroforming, switching and memory effects in oxide thin films

1978

Microelectronics Reliability

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Experiments on electroforming of Metal-Oxide-Metal thin film sandwiches which have been electroformed to exhibit voltage-controlled negative resistance are summarized and an outline of recent evidence in favour of localized or fihmentary conduction is given.A similar review is given of the experiments on oxide sandwich structures which have been formed to exhibit current-controlled negative resistance or threshold switching and memory switching. Current theories are reviewed briefly. Finally oxide memory devices are compared with those based upon the chalcogenide glasses.

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Breakdown conduction in thin dielectric films: A bibliographical survey

Cited by 19 publications

References 217 publications

Dielectric breakdown in solids

Dielectric breakdown in solids

Electrical Behaviour of Langmuir Films: A Review, Part II

Electroforming, switching and memory effects in oxide thin films

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