Bragg's Rule of Stopping Power Additivity: A Compilation and Summary of Results

Thwaites, David

doi:10.2307/3576096

Cited by 126 publications

(30 citation statements)

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“…Consequently, they mainly relate to differences in chemical bonding and physical phase state of the compound target electronic structure characterizing the moderate and low ion velocity regimes. Chemical binding effects become more significant for stopping materials of low atomic number constituents mainly as the projectile velocity approaches the transition region [28]. In this respect, the contribution to the stopping process of the C 5 H 8 O 2 molecule outermost electrons is presumably expected to become more and more pronounced with decreasing projectile velocity due to the increasing non-participation (or even the closing) of the molecule inner shell excitation channels.…”

Section: Discussionmentioning

confidence: 99%

Stopping of ∼0.2–3.4MeV/amu 1H+ and 4He+ ions in polyvinyl formal

Damache

Moussa

Ouichaoui

2010

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Discussionmentioning

confidence: 99%

Stopping of ∼0.2–3.4MeV/amu 1H+ and 4He+ ions in polyvinyl formal

Damache

Moussa

Ouichaoui

2010

Nuclear Instruments and Methods in Physics Research Section B:

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“…and for hydrogen ions, however, in most systems velocity proportional stopping was observed [24][25][26], with the only exception being protons in He [27]. Nevertheless, the observed magnitude of electronic stopping in compounds was, in certain cases, found to be strongly affected by the chemical composition also up to energies of about 100 keV [28,29].…”

Section: Introductionmentioning

confidence: 93%

Electronic interactions of medium-energy ions in hafnium dioxide

Primetzhofer

2014

Phys. Rev. A

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In this article, the electronic interaction of medium-energy ions with hafnium dioxide is studied. Stopping cross sections for He ions in the energy range from 30 to 160 keV have been measured in backscattering experiments from thin films of HfO 2 on Si using time-of-flight medium-energy ion scattering. The observed energy loss for helium ions is found to be high compared to expectations from earlier results for hydrogen in HfO 2 , a result which indicates a contribution from energy-loss processes that is different from direct excitation of electron-hole pairs in close collisions. Furthermore, data exhibit a significant deviation from velocity proportionality. A discussion of the results, together with data from studies for H and He in SiO 2 , show characteristic differences which are traced back to different electronic structures of the target materials and their influence on the charge-exchange channels that are active in the interaction with helium. Charge exchange, in turn, via shifted mean-charge states, will influence the observed ionization along the ion track. The results can furthermore serve as reference values for ion-beam-based depth profiling at medium and low ion energies.

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“…of AgGaS 2 for F + ion at different energy, comparing the experimental values with those obtained from SRIM2000, TRIM98 and the four-parameter formulae (FPF), respectively 19 on this issue can be found in [22]. Tests concerning Bragg's rule of stopping power additivity have been partially reviewed [23][24][25]. It seems that deviation from Bragg's rule may be greatest for light target (low Z) materials and for low energies.…”

Section: Resultsmentioning

confidence: 95%