2023
DOI: 10.1007/s11356-023-25993-8
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Br vacancy engineering in Cs3Bi2Br9 for photocatalytic NO oxidation under visible light

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Cited by 1 publication
(4 citation statements)
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“…Chen et al showed that the Br vacancy engineering in Cs 3 Bi 2 Br 9 resulted in the bandgap change from 2.54 to 2.27 eV. [100] Recently, the defect engineering for tunning the optical properties of MHPs has also been demonstrated in MAPbI 3 , [11b] CsPbBr 3 , [101] and Cs 3 Sb 2 I 9 . [11c] Note that accurately .…”
Section: Light Absorptionmentioning
confidence: 99%
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“…Chen et al showed that the Br vacancy engineering in Cs 3 Bi 2 Br 9 resulted in the bandgap change from 2.54 to 2.27 eV. [100] Recently, the defect engineering for tunning the optical properties of MHPs has also been demonstrated in MAPbI 3 , [11b] CsPbBr 3 , [101] and Cs 3 Sb 2 I 9 . [11c] Note that accurately .…”
Section: Light Absorptionmentioning
confidence: 99%
“…Together with PL, EIS, and Tafel plots measurements, they confirmed the superiority of Cl vacancy rich Cs 2 NaBiCl 6 in charge transfer. Also, CsPbBr 3−x I x with I vacancies, [106] Cs 3 Sb 2 I 9 with I vacancies, [11c] Cs 2 AgBiBr 6 with Br vacancies, [11d,e,g] Cs 3 Bi 2 Br 9 with Br vacancies, [100] have been discovered to facilitate the charge separation and transfer. Therefore, deliberately designing and synthesizing defects in MHP materials is promising for booting charge dynamics.…”
Section: Charge Dynamicsmentioning
confidence: 99%
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