Bounds and Code Constructions for Partially Defect Memory Cells

Abstract

This paper considers coding for so-called partially stuck memory cells. Such memory cells can only store partial information as some of their levels cannot be used due to, e.g., wear out. First, we present a new code construction for masking such partially stuck cells while additionally correcting errors. This construction (for cells with q > 2 levels) is achieved by generalizing an existing masking-only construction in [1] (based on binary codes) to correct errors as well. Compared to previous constructions in [2], our new construction achieves larger rates for many sets of parameters. Second, we derive a sphere-packing (any number of u partially stuck cells) and a Gilbert-Varshamov bound (u < q partially stuck cells) for codes that can mask a certain number of partially stuck cells and correct errors additionally. A numerical comparison between the new bounds and our previous construction of PSMCs for the case u < q in [2] shows that our construction lies above the Gilbert-Varshamovlike bound for several code parameters.