Boundary scattering in wet-etched InAs/GaSb heterostructure wires: with and without magnetic field

Abstract

We report the observation of boundary scattering in damage-free wires made from InAs/GaSb quantum wells. Fabrication of very long wires has enabled us to observe boundary scattering contribution to the resistivity of these wires both with and without a magnetic field. A very well-defined region of suppression of both field-induced and zero-field boundary scattering was observed. These effects were seen to become more pronounced as the width of the wires was reduced. Differences from boundary scattering in GaAs/AlGaAs heterostructure wires are pointed out. Results of a study of the dependence of boundary scattering on temperature are also described.

Magneto-Transport Properties of Insulating Bulk States in Bi(111) Films

“…3(a), the MR(𝐵 ‖ ) includes regions of field-induced boundary scattering, suppression of zero-field boundary scattering and recovery of the classic positive. [15] In the absence of a magnetic field, the electrons suffer the impurities scattering to exhibit a large zero-field resistance. Compared with the zero-field resistance, the field-induced boundary scattering causes a 1.2% positive MR(𝐵 ‖ ) at about 1.2 T. With the increasing 𝐵 ‖ field, the backscattering suppression amounts to 6% negative MR(𝐵 ‖ ) at around 3.2 T. The negative MR(𝐵 ‖ ) implies that only forward scattering is very effective in reducing zero-field boundary scattering.…”