Boundary Resistance of the Ferromagnetic-Nonferromagnetic Metal Interface

Son, P.C. van; Kempen, H. van; Wyder, P.

doi:10.1103/physrevlett.58.2271

Cited by 537 publications

(419 citation statements)

References 8 publications

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“…Equation (6.4) is valid only for the case of a purely perpendicular magnetic field B = B zẑ [102]. In the most general case, if there is also an in-plane field component B yŷ (owing to misalignment or a static field) and/or if the perpendicular component of the field B z is strong enough to overcome the in-plane magnetic anisotropy of the film, the cos ut term must be replaced with 5) where in the simplest case, the magnetization rotation angles q 1,2 = arcsin(tanh(B z /h 1,2 )), and h 1,2 are the demagnetization fields of injector and detector ferromagnetic layers (typically several tesla) [86]. From equation (6.5), we can show that small misalignments from the out-of-plane direction during single-axis precession measurements cause only in-plane magnetization switching of injector and detector and a negligible correction to the amplitude of precession oscillations to first order [65].…”

Section: (A) Undoped Siliconmentioning

confidence: 99%

“…At an ideal interface where the absence of interfacial spin relaxation preserves continuity of the electrochemical potentials [5,6], the expressions given for the interfacial electrochemical splitting in equations (1.1) and (1.3) must be equal. This then allows us to calculate the polarization of the injected current in the semiconductor as 4) which is valid in the low-b limit (typical values for elemental FMs Ni, Co and Fe are b 0.4 [7]).…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Introduction to spin-polarized ballistic hot electron injection and detection in silicon

Appelbaum

2011

Phil. Trans. R. Soc. A.

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Ballistic hot electron transport overcomes the well-known problems of conductivity and spin lifetime mismatch that plague spin injection attempts in semiconductors using ferromagnetic ohmic contacts. Through the spin dependence of the mean free path in ferromagnetic thin films, it also provides a means for spin detection after transport. Experimental results using these techniques (consisting of spin precession and spin-valve measurements) with silicon-based devices reveals the exceptionally long spin lifetime and high spin coherence induced by drift-dominated transport in the semiconductor. An appropriate quantitative model that accurately simulates the device characteristics for both undoped and doped spin transport channels is described; it can be used to recover the transit-time distribution from precession measurements and determine the spin current velocity, diffusion constant and spin lifetime, constituting a spin 'HaynesShockley' experiment without time-of-flight techniques. A perspective on the future of these methods is offered as a summary.

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Section: (A) Undoped Siliconmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Introduction to spin-polarized ballistic hot electron injection and detection in silicon

Appelbaum

2011

Phil. Trans. R. Soc. A.

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“…The second boundary condition for ∆P is needed at the interface x = L. The condition may be derived from the chemical potential continuity [16,17]. It takes the form:…”

Section: Nonequilibrium Spin Polarizationmentioning

confidence: 99%

Magnetization reversal and current hysteresis due to spin injection in magnetic junction

Elliott

Épshteǐn

Gulyaev

et al. 2004

Journal of Magnetism and Magnetic Materials

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Magnetic junction is considered which consists of two ferromagnetic metal layers, a thin nonmagnetic spacer in between, and nonmagnetic lead. Theory is developed of a magnetization reversal due to spin injection in the junction. Spin-polarized current is perpendicular to the interfaces. One of the ferromagnetic layers has pinned spins and the other has free spins. The current breaks spin equilibrium in the free spin layer due to spin injection or extraction. The nonequilibrium spins interact with the lattice magnetic moment via the effective s-d exchange field, which is current dependent. Above a certain current density threshold, the interaction leads to a magnetization reversal. Two threshold currents are found, which are reached as the current increases or decreases, respectively, so that a current hysteresis takes place. The theoretical results are in accordance with the experiments on magnetization reversal by current in three-layer junctions Co/Cu/Co prepared in a pillar form.PACS: 75.60.Ej; 75.70.Cn.

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“…The problem of boundary conditions appears here by a natural way. The most of the published works consider either a contact between ferromagnetic and nonmagnetic materials [2]- [5] or between two ferromagnets with collinear magnetic moments such as a domain wall [6]. In the both cases, there is a single quantization axis.…”

Section: Introductionmentioning

confidence: 99%

Disturbance of spin equilibrium by current through the interface of noncollinear ferromagnets

Épshteǐn¹,

Gulyaev²,

Zilberman³

2007

Journal of Magnetism and Magnetic Materials

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Boundary conditions are derived that determine the penetration of spin current through an interface of two non-collinear ferromagnets with an arbitrary angle between their magnetization vectors. We start from the well-known transformation properties of an electron spin wave functions under the rotation of a quantization axis. It allows directly find the connection between partial electric current densities for different spin subbands of the ferromagnets. No spin scattering is assumed in the near interface region, so that spin conservation takes place when electron intersects the boundary. The continuity conditions are found for partial chemical potential differences in the situation. Spatial distribution of nonequilibrium electron magnetizations is calculated under the spin current flowing through a contact of two semi-infinite ferromagnets. The distribution describes the spin accumulation effect by current and corresponding shift of the potential drop at the interface. These effects appear strongly dependent on the relation between spin contact resistances at the interface.

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Boundary Resistance of the Ferromagnetic-Nonferromagnetic Metal Interface

Cited by 537 publications

References 8 publications

Introduction to spin-polarized ballistic hot electron injection and detection in silicon

Introduction to spin-polarized ballistic hot electron injection and detection in silicon

Magnetization reversal and current hysteresis due to spin injection in magnetic junction

Disturbance of spin equilibrium by current through the interface of noncollinear ferromagnets

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