Boundary Conditions for Thermoelectric Cooling in p–n Junction

Lashkevych, Igor; Gurevich, Yury G.

doi:10.1007/s10765-011-0969-z

Cited by 7 publications

(2 citation statements)

References 20 publications

(29 reference statements)

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“…The system of equations 50, 51, 68, and 63 defines the mathematical framework of thermoelectric cooling, and it must be complemented with the appropriate boundary conditions that describe the electric currents, the heat flux, and the electric potential through the interfaces (75)(76)(77). Let us assume that in the y-and z-direction the p-n junction is adiabatically isolated.…”

Section: Equations For Cooling and Heating In P-n Junctionsmentioning

confidence: 99%

Peltier Effect in Semiconductors

Gurevich

Pérez

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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In recent years, devices based on the Peltier effect, which is the basis for solid‐state thermoelectric cooling, have evolved rapidly to meet the fast‐growing electronic industry. The Peltier effect corresponds to the heat extraction or absorption occurring at the contact between two different conducting media when a direct current (DC) electric current flows through this contact. A comprehensive study of the mechanisms of heating and cooling originated by an electrical current in semiconductor devices is reported. The thermoelectric cooling in n ‐ n , p ‐ p , and p ‐ n junction contacts, as well as inhomogeneous bulk semiconductors, are analyzed. Both degenerate and nondegenerate electron and hole gases are considered. The role of recombination and nonequilibrium charge carriers in the contact cooling (heating) effect is discussed. Along with the above, special attention is paid to several aspects of nonequilibrium thermodynamics of thermoelectric phenomena involved in Peltier effect in semiconductors that demand a careful examination. The formulation of an adequate self‐consistent theoretical model describing the Peltier effect is also presented.

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Section: Equations For Cooling and Heating In P-n Junctionsmentioning

confidence: 99%

Peltier Effect in Semiconductors

Gurevich

Pérez

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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“…Moreover a larger Seebeck coefficient would enhance the heat removal. The boundary conditions for the Peltier effect in semiconductors were studied by Lashkevych and Gurevich [6] using potential barriers (p-n junction). The surface merge of charge carriers was analyzed for the electric current and the heat generation.…”

Section: Introductionmentioning

confidence: 99%