Boundaries of the homologous phases in Sb–Te and Bi–Te binary alloy systems

Kifune, Kouichi; Tachizawa, T.; Kanaya, Hiroki; Kubota, Y.; Yamada, Noboru; Matsunaga, Toshiyuki

doi:10.1016/j.jallcom.2015.05.077

Cited by 5 publications

(5 citation statements)

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“…Because this long-period structure is extremely sensitive to the composition and also varies depending on the heat treatment applied to the specimen, it is important to optimize both the composition and heat treatment. Previously, we analyzed the crystal structures of Sb-Te and Bi-Te chalcogenide compounds with low Te concentrations in detail and confirmed the phase boundaries of the X phases [16]. The purpose of the present study was to confirm the regions occupied by the X phases and the Te-rich phase boundaries in both systems.…”

Section: Introductionsupporting

confidence: 51%

“…It is very interesting that, in contrast to the Bi-Te system, there are no intermetallic compounds between Sb5Te6 and Sb2Te3 in the Sb-Te system (Figure 4). In our prior work [16], we found that the boundary of the X phase on the Bi-rich side is a Bi8Te3 compound with 27.3 at% Te. Considering this previous result together with the data obtained in the present study, it can be concluded that the X phase region is distributed from 27.3 to 55.7 at% Te (Figure 7).…”

Section: Sb-te Systemmentioning

confidence: 86%

“…In combination with the results obtained in the present Crystals 2019, 9, 447 5 of 10 study, it is apparent that the X phase region in the Sb-Te binary system is widely distributed through compositions ranging from 13.0 to 54.5 at% Te (Figure 4). Based on our previous study [16], the boundary of the X phase on the Sb-rich side is the Sb20Te3 compound, with a Te concentration of 13.0 at%. In combination with the results obtained in the present study, it is apparent that the X phase region in the Sb-Te binary system is widely distributed through compositions ranging from 13.0 to 54.5 at% Te (Figure 4).…”

Section: Sb-te Systemmentioning

confidence: 99%

“…Here, it can be seen that two phases were present in both the Bi 43 Te 57 and Bi 41 Te 59 specimens, whereas the other specimens consisted of a single phase. Based on our previous study [16], the boundary of the X phase on the Sb-rich side is the Sb20Te3 compound, with a Te concentration of 13.0 at%. In combination with the results obtained in the present study, it is apparent that the X phase region in the Sb-Te binary system is widely distributed through compositions ranging from 13.0 to 54.5 at% Te (Figure 4).…”

Section: Sb-te Systemmentioning

confidence: 99%

“…However, because of the rapidly increasing amount of digital data requiring storage, further improvements in the capacity, reliability, and durability of recording media are desired. The recording films in these media are predominantly composed of GeTe-Sb 2 Te 3 (GST) pseudo-binary compounds [1], which are obtained by adding Ge to Sb-Te system (group [15][16] compounds, or Ag-In-Sb-Te (AIST) compounds, which are produced by adding a small amount of Ag and In [2]. Both materials allow the recording or rewriting of data as a result of a reversible transition between crystalline and amorphous phases in response to temperature changes due to irradiation with laser light.…”

Section: Introductionmentioning

confidence: 99%

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Boundaries of the X Phases in Sb–Te and Bi–Te Binary Alloy Systems

et al. 2019

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Sb-Te and Bi-Te compounds are key components of thermoelectric or phase change recording devices. These two binary systems form commensurately/incommensurately modulated long-period layer stacking structures known as homologous phases that comprise discrete intermetallic compounds and X phases. In the latter, the homologous structures are not discrete but rather appear continuously with varying stacking periods that depend on the binary composition. However, the regions over which these X phases exist have not yet been clarified. In this study, precise synchrotron X-ray diffraction analyses of various specimens were conducted. The results demonstrate that the X phase regions are located between Sb 20 Te 3 and Sb 5 Te 6 in the Sb-Te system and between Bi 8 Te 3 and Bi 4 Te 5 in the Bi-Te system.

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Section: Introductionsupporting

confidence: 51%

Section: Sb-te Systemmentioning

confidence: 86%

Section: Sb-te Systemmentioning

confidence: 99%

Section: Sb-te Systemmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Boundaries of the X Phases in Sb–Te and Bi–Te Binary Alloy Systems

et al. 2019

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Different Approach to Thermodynamic Description of Bi-Te Binary System

Drzewowska,

Onderka

2023

J. Phase Equilib. Diffus.

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The aim this work was the reinvestigation of phase equilibria in Bi-Te system. The as-cast and long-time equilibrated alloys of Bi-Te binary system were analysed by scanning electron microscopy, X-ray diffraction (XRD) and differential thermal analysis (DTA) methods. The primary solidified phases were identified for as-cast samples. The existence of the four intermetallic phases: Bi2Te3, BiTe, Bi2Te, Bi7Te3 was confirmed. Three of them melt incongruently in peritectic reactions. The model parameters of all phases in this system were assessed by optimization using available data by Calphad method. The stabilisation of these phases in other ternary systems was discussed taking into consideration its future application in thermodynamic description of Ag-Bi-Te ternary system.

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