Abstract:A model is presented to allow calculation of the bound states in the conduction band notch at the interface between the interfacial native GeO2 and high-κ dielectric layer in a Ge MOSFET gate stack. The notch represents a potential charge trapping site, which can induce threshold voltage instability. The model is applied to a three-dimensional structure, and the number of electrons or average occupancy of confined electrons in the notch is calculated. The effect of device physical and electrical parameters on … Show more
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