Bound magneto-acceptor and magneto-donor states in the conduction band of GaAsGaAlAs heterostructures

Vincente, P.; Raymond, André; Saadi, Meriem; Couzinet, B.; Kubisa, M.; Zawadzki, W.; Etienne, B.

doi:10.1016/0038-1098(95)00514-5

Cited by 18 publications

(14 citation statements)

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“…This has also been confirmed experimentally. 18 Taking the advantage of the double-well structure of the potential U h , we can solve the hole motion by independently studying the motions in the two wells, and later including the coupling between the wells via the off-diagonal tunneling matrix element. Thus the pair of lowest-energy hole states will be approximated by diagonalizing the Hamiltonian H h in the subspace spanned by the pair of ground states in the two wells treated separately: Lh and Rh , with the energies E Lh and E Rh , respectively.…”

Section: ͑10͒mentioning

confidence: 99%

Theory of radiative recombination from the metastable excited states of quantum dots

et al. 1998

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The radiative recombination of an exciton ͑electron-hole pair͒ confined in a semiconductor quantum dot is studied within a general model based on the effective-mass approximation. The dependence of the photoluminescence spectrum on the size of the dot and the magnetic field describe well a series of recent experimental results. In particular, a characteristic splitting of the main photoluminescence peak into a doublet or triplet is observed at the critical size and magnetic field, as a consequence of the appearance of metastable states in the exciton spectrum. ͓S0163-1829͑98͒06915-X͔ PHYSICAL REVIEW B 15 APRIL 1998-I VOLUME 57, NUMBER 15 57 0163-1829/98/57͑15͒/9069͑12͒/$15.00 9069

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Section: ͑10͒mentioning

confidence: 99%

Theory of radiative recombination from the metastable excited states of quantum dots

et al. 1998

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“…Magneto-donors in symmetric wells were described theoretically by Green and coworkers [3] and by MacDonald and Ritchie [4], while the case of triangular-like wells was treated by Kubisa and Zawadzki [5]. Vicente et al [6] presented evidence for new localized magneto-impurity states in 2D systems, created by conduction electrons bound to ionized acceptors (as originally proposed in [5]). Recently, Raymond et al [7] observed oscillatory binding energy of magneto-donors in GaAs/GaAlAs heterostructure in the Quantum Hall regime.…”

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confidence: 96%

“…Below these three excitations we observe three additional transitions not accounted for by the free-carrier picture. The lowest transition A was identified as excitation originating from the ground MD state and the 1b state in the valence band [6,7]. We identify transitions C and G as originating from the excited MD states associated with LLs 1 ± ± and 2 + , respectively.…”

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confidence: 99%

“…Shifts of interband energies as well as intensity oscillations of various peaks are clearly observed. A deconvolution procedure, which allows us to determine the peak positions, was discussed in [6] (for a different sample).…”

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“…This can be clearly seen for the highest field extrema: the intensity minimum of B (maximum of Ex2-f) transitions is at B % 8 T, while the intensity minimum of A (maximum of Ex2-b) transitions is at B % 8.6 T. The exact correlation of free carrier and bound carrier intensities indicates that the observed bound exciton is bound to the donor at the GaAs/GaAlAs interface. The conclusion concerning the donor position is based on the calculation of the donor binding energies [6,7].…”

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Magneto-Donors and Donor-Bound Excitons in GaAs/Ga0.67Al0.33As Heterostructures in the Quantum Hall Regime

Couzinet

Raymond

Elmezouar

et al. 1998

phys. stat. sol. (b)

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Interband photoluminescence (PL) is studied as a function of magnetic field in modulation-doped GaAs/Ga 0.67 Al 0.33 As heterostructures in the Quantum Hall regime. The oscillatory PL data exhibit free electron and donor (ground electric subband) to free hole transitions, as well as free and bound exciton (first excited subband) transitions. Pronounced intensity oscillations of all transitions are observed as the magnetic field varies between 0 and 12 T. In particular, we observe, for the first time, strong intensity oscillations of donor±hole and bound exciton transitions with exactly opposite phase from which we conclude that the observed bound excitons are bound to the donors at the GaAs/ Ga 0.67 Al 0.33 As interface. Similarly, the intensities of free electron±hole and free exciton transitions oscillate with exactly opposite phase. Various mechanisms of the intensity oscillations are discussed, taking into account the available parallel behaviour of the free and bound carrier excitations. We exclude an oscillatory screening by 2DEG to be the cause of the intensity oscillations. We conclude that the intensity transfer between the electron±hole and the free exciton transitions occurs when, as a function of magnetic field, the interband electron±hole energy becomes larger than the corresponding exciton energy, so that it is advantageous for the pair to form an excitonic state. A similar mechanism is responsible for the intensity transfer between the donor±hole and the bound exciton transitions.Magneto-donors (MD) in quantum wells were investigated by various authors with the use of optical methods [1]. Transport studies on heavily doped heterojunctions demonstrated a field-induced metal±nonmetal transition [2]. Magneto-donors in symmetric wells were described theoretically by Green and coworkers

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4.2.2.1.9 Excitons under the influence of external fields

Klingshirn¹

Landolt-Börnstein - Group III Condensed Matter

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Bound magneto-acceptor and magneto-donor states in the conduction band of GaAsGaAlAs heterostructures

Cited by 18 publications

References 10 publications

Theory of radiative recombination from the metastable excited states of quantum dots

Theory of radiative recombination from the metastable excited states of quantum dots

Magneto-Donors and Donor-Bound Excitons in GaAs/Ga0.67Al0.33As Heterostructures in the Quantum Hall Regime

4.2.2.1.9 Excitons under the influence of external fields

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