Abstract. Based on the available experimental data are made model estimates and the implementation criteria of inverse electron transition insulator-metal set in the "classical" ferromagnetic semiconductor -europium monoxide which is the base model of research in semiconductor spintronics.Keywords: Ferromagnetic semiconductor, europium monoxide, insulator-metal transition, nonstoichiometry, local electronic level, magnetic polaronIn connection with the continued works in recent years the rapid development in the physical materials field of semiconductor spin electronics (spintronics) as a model of research has been and remains a "classic" ferromagnetic semiconductor -europium monoxide -EuO [1]. A characteristic feature of its crystal chemistry is that it is a phase of variable composition, EuO 1+δ , which extends the boundaries of homogeneity in the area of excess (δ<0), and the lack of (δ>0) metal. True nonstehiometric area it is fairly narrow: δ -index varies between 0> δ> 0.005 (excess metal) and 0 <δ <0.035 (excess oxygen).[2] However, depending on the oxygen content significantly are changing the properties monoxide, in particular, the electrical conductivity. At the same time regardless of the sign δ it is always characterized by n-type and its temperature dependence is typical for semiconductors. The specific conductivity values of EuO phase at room temperature are in the range σ = 10 -8 -10 -12 (Ohm•cm) -1 . In the case of excess metal (i.e. anionic defects) samples EuO 1-δ -phase below the Curie temperature (T c = 69.4 K) at the T i ≈ 52 K to test the temperature insulator-metal transition (I -M) with a conductivity jump 13 -15 orders of magnitude [3,4] (Fig.1). A greater jump in the specific electrical resistivity of conductive solid phase is observed only in the superconducting transition in them. In this case, for the phase EuO 1-δ it is the second largest known today jump electrical conductivity in crystals. Moreover, it is the first of the public when it becomes metal the low-temperature ferromagnetic-ordered phase. To date, similar to the character of semiconductor-metal transition, although with a much smaller jump of electric resistivity, Δρ/ρ, is known for some compounds doped of the ferromagnetic ordered lanthanum manganites -the magnetic semiconductors, a value of T c which is capable of more than room temperature [5]. Since the physical nature the I -M-transition in this class of materials has a lot of similarities, we reproduce here the most adopted model previously proposed for europium monoxide and, as we see, there is no other alternative. Illustration of this transition for EuO 1-δ crystals with an index of 0 <δ<0,005 in Fig. 1 also reproduces the effects of an external magnetic field [6].It is evident that the latter shifts the temperature of the electronic transition in the direction of its increase, several reducing the magnitude of the jump ∆ρ/ρ, but without destroying the character of the transition. It should be noted that the insulator-metal transition in a defective oxygen europ...