Bound exciton luminescence in ZnSe under hydrostatic pressure

Shan, Wei; Hays, J.; Yang, Xing; Song, J. J.; Cantwell, E.; Aldridge, J.

doi:10.1063/1.106553

Cited by 15 publications

(6 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Though the application of pressure increases the binding energy of a shallow exciton because of an increase in the electron effective mass and a decrease in the dielectric constant, the pressure-induced change of its binding energy is expected to be quite negligible ͑Ͻ1%͒, as is seen by using the effective-mass approximation. 4,8 Therefore, it is reasonable that the pressure dependence of the I 2 line at 9 K should be the same as that of the band gap at 9 K. 7 The magnitude of ␤ for the I 2 line in wurtzite GaN at 9 K determined here is smaller than that for the free electronbound hole ͑FB͒ transition line in zinc-blende GaN ͑Ref. 4͒ ͑Table I͒, while the values of ␣ for both structures are the 2. The dependence of the PL peak energies of the I 2 line ͑᭺ at 9 K, ᭹ at 300 K͒, the ''yellow'' band ͑ᮀ at 9 K, at 300 K͒, and the DAP lines ͑zero phonon ͑ࡗ͒, one phonon ͑᭝͒, and two phonon ͑᭞͒ lines at 9 K͒ as a function of pressure.…”

mentioning

confidence: 69%

Photoluminescence from wurtzite GaN under hydrostatic pressure

Kim

Herman

Tuchman

et al. 1995

Applied Physics Letters

View full text Add to dashboard Cite

The photoluminescence spectrum of undoped epitaxial wurtzite GaN layers on sapphire was measured for applied hydrostatic pressures up to 73 kbar at 9 K and up to 62 kbar at 300 K. The pressure dependences of the I2 exciton recombination line and the ‘‘yellow’’ band (2.2 eV band at ambient pressure) were examined at 9 and 300 K, and the series of donor-acceptor-pair emission lines was analyzed at 9 K. From the I2 lines, it was found that the band gap increases with pressure by 4.4±0.1 meV/kbar at 9 K and 4.7±0.1 meV/kbar at 300 K.

show abstract

mentioning

confidence: 69%

Photoluminescence from wurtzite GaN under hydrostatic pressure

Kim

Herman

Tuchman

et al. 1995

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Energetic position and fast quenching with temperature allow tentative identification of the peaks at 3.3730 and 3.3742 eV as the ionized counterparts of the I 4 and I 5 peaks, respectively. 17,18 A T emission is observed from this EPLD grown sample along with peaks which are likely from LPB A and UPB A recombination. For comparison, the 3.5 K PL spectrum from the EPLD grown sample has been redshifted by 1.5 meV in Fig.…”

Section: Resultsmentioning

confidence: 74%

Unique photoluminescence from ZnO grown by eclipse pulsed laser deposition

Mendelsberg¹,

Kennedy²,

Durbin³

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Articles you may be interested inStructure and optical properties of a-plane ZnO/Zn0.9Mg0.1O multiple quantum wells grown on r-plane sapphire substrates by pulsed laser deposition Room temperature photoluminescence from ZnO quantum wells grown on (0001) sapphire using buffer assisted pulsed laser deposition Nanostructured ZnO was deposited by eclipse pulsed laser deposition from a metallic Zn target in an oxygen atmosphere. Photoluminescence ͑PL͒ was carried out on the structures at liquid helium temperatures. The temperature dependence of the PL as well as the power dependence at 4 K gave insight into the processes governing the light emission from these samples. Free A and B excitonic emission was observed as well as exciton-polariton emission from the upper and lower polariton branches. The low temperature PL was dominated by the I 7 exciton, which currently has an unknown chemical origin and is not commonly observed in the PL spectrum of bulk ZnO. Power dependence of the I 7 feature showed unique behavior not previously reported. All the other features had nearly linear power dependence while the I 7 peak had an emission exponent of 1.53Ϯ 0.01. Lead was the dominant impurity in the Zn target used to grow the eclipse pulsed laser deposited ͑EPLD͒ samples and seemed a likely candidate for the origin of the I 7 excitonic peak. Implantation of Pb into bulk ZnO showed no appearance of the I 7 feature at 0.01% Pb concentration. As such, Pb may not be the origin of the I 7 feature which dominates the PL from the EPLD grown samples. However, due to the complicated interactions of Pb in a ZnO host, it is likely that the Pb is incorporated differently in the implanted bulk and EPLD grown ZnO.

show abstract

“…[20][21][22] Although the exact nature of the acceptors is not clear, the defect is usually attributed either to the Zn vacancies or to the substitutional impurities Cu Zn . 21,22 As being reported in the literature, the Zn-vacancies can also appear in the ZnSe films grown by molecular beam epitaxy, especially near the film/substrate interface, with a density depending on the growth conditions. 23,.…”

Section: Photoluminescence Spectramentioning

confidence: 99%

Thickness dependence of exciton and polariton spectra from ZnSe films grown on GaAs substrates

Wang

Huang

Sheng

et al. 2001

Journal of Applied Physics

View full text Add to dashboard Cite

of in-plane strain anisotropy in ZnSe(001)/GaAs layers using reflectance difference spectroscopy J.ZnSe films with thicknesses from 0.05 to 1.45 m were grown on GaAs substrates by molecular beam epitaxy. Low temperature photoluminescence ͑PL͒ and reflectance spectra are presented to show the thickness dependence of the exciton and polariton properties in the films. In addition to sharp PL peaks from free and donor bound excitons, an acceptor bound exciton peak was observed in the thin films and its intensity decreases rapidly with the film thickness. The PL characteristics show the acceptor centers being the defect states near the ZnSe/GaAs interface. The classical theory of exciton-polaritons was used to calculate the reflectance spectra and compared to the measured results. The comparison reveals the effects of strain, surface, and interface on the reflectance spectra from both heavy-and light-hole excitons. In addition to the strain-induced light-and heavy-hole splitting, the light-hole excitons show a larger damping and less sensitivity to the surface dead layer than the heavy-hole excitons. When the film thickness increases, the interference effects become more important and the contribution from the excited exciton states to the reflectance spectra may no longer be negligible.

show abstract

Bound exciton luminescence in ZnSe under hydrostatic pressure

Cited by 15 publications

References 18 publications

Photoluminescence from wurtzite GaN under hydrostatic pressure

Photoluminescence from wurtzite GaN under hydrostatic pressure

Unique photoluminescence from ZnO grown by eclipse pulsed laser deposition

Thickness dependence of exciton and polariton spectra from ZnSe films grown on GaAs substrates

Contact Info

Product

Resources

About