2012
DOI: 10.1063/1.4765646
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Bound and anti-bound biexciton in site-controlled pyramidal GaInAs/GaAs quantum dots

Abstract: We present a detailed study of biexciton complexes formed in single, site-controlled pyramidal GaInAs/GaAs quantum dots (QDs). By using power dependent measurements and photon correlation spectroscopy, we identify the excitonic transitions of a large number of pyramidal QDs, exhibiting both positive and negative biexciton binding energies. Separation of charges within the QD, caused by piezoelectric fields, is believed to be responsible for the positive to negative crossover of the biexciton binding energy wit… Show more

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Cited by 21 publications
(14 citation statements)
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“…We have shown, both experimentally and theoretically, different FWM creation pathways, and their polarization selection rules. The results are promising for the application of heterodyne spectral interferometry to a large range of QD systems, like site-controlled QDs [51][52][53][54] or QD molecules [55,56] and-in a broader context-other individual optical transitions in solid state.…”
Section: Discussionmentioning
confidence: 99%
“…We have shown, both experimentally and theoretically, different FWM creation pathways, and their polarization selection rules. The results are promising for the application of heterodyne spectral interferometry to a large range of QD systems, like site-controlled QDs [51][52][53][54] or QD molecules [55,56] and-in a broader context-other individual optical transitions in solid state.…”
Section: Discussionmentioning
confidence: 99%
“…The role of morphological details as size and shape, composition profile, on the electronic states (and confinement potential) has been addressed both experimentally and theoretically on numerous kind of III-V material systems [33][34][35][36][37][38] , including also InAs on InP 28,30 but for only slightly asymmetric structures. For example, the importance of correlations, when the size of the nanostructure increases, has been deduced by observing biexciton binding energy increase due to smaller separation between excited hole states.…”
Section: Introductionmentioning
confidence: 99%
“…This competing mechanism is not possible for a binary barrier such a GaAs. Correlations with the emission energyX 10 have indeed been reported for the biexciton and negative trion binding energies in a recent study of pyramidal InGaAs QDs in pure GaAs barriers [46].…”
Section: Coulomb Energiesmentioning
confidence: 59%