Bottom‐Up Grown 2D InSb Nanostructures

Abstract

Low‐dimensional high‐quality InSb materials are promising candidates for next‐generation quantum devices due to the high carrier mobility, low effective mass, and large g‐factor of the heavy element compound InSb. Various quantum phenomena are demonstrated in InSb 2D electron gases and nanowires. A combination of the best features of these two systems (pristine nanoscale and flexible design) is desirable to realize, e.g., the multiterminal topological Josephson device. Here, controlled growth of 2D nanostructures, nanoflakes, on an InSb platform is demonstrated. An assembly of nanoflakes with various dimensions and morphologies, thinner than the Bohr radius of InSb, are fabricated. Importantly, the growth of either nanowires or nanoflakes can be enforced experimentally by setting growth and substrate design parameters properly. Hall bar measurements on the nanostructures yield mobilities up to ≈20 000 cm2 V−1 s−1 and detect quantum Hall plateaus. This allows to see the system as a viable nanoscale 2D platform for future quantum devices.

High‐Density Sb2Te3 Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth

“…(MO)CVD growth of single‐crystals platelets with partially controlled dimensions and orientation in arrays was reported in refs. . Here it is shown that the same level of crystal quality is reproduced on a pillar, rather than platelets geometry, and in a density that exceeds by orders of magnitude those reported in the above‐mentioned references.…”

“…On the other hand, these types of synthesis have in most cases been performed on planar, unpatterned substrates, therefore leading to a random distribution of the NWs . The growth of ordered arrays of nanocrystals of different chalcogenide alloys, including Sb 2 Te 3 , by selective MOCVD growth has been demonstrated on low aspect‐ratio lithographically patterned (≈100 nm size) templates and on substrates locally treated by oxygen plasma, as well as using Au nanodeposits as catalyzers exploiting the vapor–liquid–solid mechanism . For what concerns high‐aspect‐ratio chalcogenide nanostructures, the growth of Te‐rich Sb 2 Te 3 NWs exploiting the vapor–solid mechanism on substrates patterned with pores of diameter ≈50 nm and height ≈100 nm has been explored .…”

Nanosails Showcasing Zn3As2 as an Optoelectronic‐Grade Earth Abundant Semiconductor

“…Further work could also aim at optimizing the growth conditions to increase the yield of nanosails as in refs. .…”

Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet

“…However, to build a device in which braiding of topological quantum states, such as Majorana fermions, can be conveniently performed and thus topological quantum computations can be designed and realized, it could be inevitable to move from single-nanowire structures to multiple-nanowire 20,21 and twodimensional (2D) planar quantum structures [22][23][24] . Recently, highquality InSb/InAlSb heterostructured quantum wells 25,26 and freestanding InSb nanosheets [27][28][29][30] have been achieved by epitaxial growth techniques. In comparison with InSb/InAlSb quantum well systems, the free-standing InSb nanosheets have advantages in direct contact by metals, including superconducting materials, in easy transfer to different substrates, and in convenient fabrication of dual-gate structures.…”