In this study, we conducted first-principles calculations
interfaced
with Boltzmann transport theory to examine the carrier-dependent thermoelectric
properties of CrS2–x
Te
x
(x: 0, 1, 2) dichalcogenides monolayers.
We conducted a systematic analysis of the structural, phonon band
structures, elastic properties, electronic structures, and thermoelectric
properties, of electron (e) and hole (h) doped CrS2–x
Te
x
(x: 0, 1, 2) dichalcogenides monolayers. The studied 2D TMDCs exhibit
structural stability, as indicated by the negative formation energy.
Additionally, the phonon band structures indicate no negative frequencies
along any wave vector, confirming the dynamic stability of the CrS2–x
Te
x
monolayers.
CrS2 and CrTe2 monolayers are semiconductors
with direct bandgaps of 1.01 and 0.67 eV, respectively. A Janus CrSTe
monolayer has a smaller bandgap of 0.21 eV. Temperatures range between
300 and 500 K, and concentrations of e(h) doped in the range of 1.0
× 1018–1.0 × 1020 cm–3 are used to compute the thermoelectric transport coefficients. The
low lattice thermal conductivity is predicted for the studied compounds,
among which Janus CrSTe and CrTe2 have the minimum value
of κlat ≈ 1 W/mK @ 700 K.
The figure-of-merit ZT projected value at the optimal e(h) doping
concentration for the CrS2 monolayer is as high as 0.07
(0.09) at 500 K. Our findings demonstrate how to design improved thermoelectric
materials suitable for various thermoelectric devices.