Bottom-contact fullerene C60 thin-film transistors with high field-effect mobilities

Kitamura, M.; Aomori, Shigeru; Na, Jong Ho; Arakawa, Yasuhiko

doi:10.1063/1.2959732

Cited by 49 publications

(44 citation statements)

References 16 publications

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“…Fig. 2b therefore indicates that the contact resistance drops with gate bias; in good agreement with literature data [7,[11][12][13]. Thus; without barrier lowering the effective barrier is equal to the initial barrier independent of the gate bias.…”

Section: Resultssupporting

confidence: 77%

“…With increasing barrier height; the current has a superlinear; diode-like dependence on V D at low drain bias and the current is almost perfectly flat at large drain bias. Consequently; the output curves at high barrier height show an S-shape; as experimentally observed in severely contact limited transistors [12,14,16,17]. The origin is that for a given gate bias the barrier lowering increases with source-drain bias; since the total field at the source contact is enhanced.…”

Section: Resultsmentioning

confidence: 49%

“…In a coplanar structure the contact resistance has been explained as the combined effect of a Schottky contact and a field-dependent mobility [21,22]. Although these physical effects enable a good modeling of the transistor characteristics;they are not able to explain why an OFET is more insensitive to the barrier height than an OLED [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

“…In particular; the contact resistance reduces with increasing gate-bias [7,[11][12][13] and with increasing temperature [14,15]. Severely contact limited transistors show an S-shaped output curve (current vs. drain bias; I D vs. V D ); with a nonlinear diode-like behavior at low drain bias [12,14,16,17]. Coplanar transistors usually have a higher contact resistance with respect to their 1566-1199/$ -see front matter Ó 2012 Elsevier B.V. All rights reserved.…”

Section: Introductionmentioning

confidence: 99%

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Gate-bias assisted charge injection in organic field-effect transistors

Brondijk

Torricelli

Smits

et al. 2012

Organic Electronics

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Gate-bias assisted charge injection in organic field-effect transistors Brondijk, J. J.; Torricelli, F.; Smits, E. C. P.; Blom, P. W. M.; de Leeuw, D. M. Take-down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.Downloaded from the University of Groningen/UMCG research database (Pure): http://www.rug.nl/research/portal. For technical reasons the number of authors shown on this cover page is limited to 10 maximum. a b s t r a c tThe charge injection barriers in organic field-effect transistors (OFETs) seem to be far less critical as compared to organic light-emitting diodes (OLEDs). Counter intuitively; we show that the origin is image-force lowering of the barrier due to the gate bias at the source contact; although the corresponding gate field is perpendicular to the channel current. In coplanar OFETs; injection barriers up to 1 eV can be surmounted by increasing the gate bias; enabling extraction of bulk transport parameters in this regime. For staggered transistors; however; the injection is gate-assisted only until the gate bias is screened by the accumulation channel opposite to the source contact. The gate-assisted injection is supported by two-dimensional numerical charge transport simulations that reproduce the gate-bias dependence of the contact resistance and the typical S-shaped output curves as observed for OFETs with high injection barriers.

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Section: Resultssupporting

confidence: 77%

Section: Resultsmentioning

confidence: 49%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Gate-bias assisted charge injection in organic field-effect transistors

Brondijk

Torricelli

Smits

et al. 2012

Organic Electronics

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“…No degradation had been detected even for more than 1 month. With the introduction of pentacene as buffer layer, the resulting FET devices based on C 60 demonstrated high electron mobilities of 3.23 cm 2 V −1 s −1 [278]. Moreover, when using divinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB) as the dielectric layer, the corresponding devices gave the highest mobility of 6 cm 2 V −1 s −1 [279].…”

Section: Fullerenesmentioning

confidence: 97%

Organic Semiconductors for Field-Effect Transistors

Zhang

2015

Lecture Notes in Chemistry

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An important application of organic semiconductors is to fabricate organic field-effect transistors (OFETs) which are essential building blocks for the next generation of organic circuits. In terms of molecular size or molecular weight, organic semiconductors can be divided into small-molecule and polymer semiconductors, and thus their corresponding OFETs can also be categorized into organic small molecule OFETs and polymer field-effect transistors (PFETs). On the basis of the main charge carriers transporting in OFET channels, organic semiconductors can be further divided into p-type, n-type, and ambipolar semiconducting materials. According to the characteristic of the organic semiconductors, the OFETs can be classified into two types: organic thin film transistors (OTFTs) and organic single crystal transistors. In any kind of OFET devices, organic semiconductor materials are the core; their properties determine the performance of the electronic devices. Therefore, the design and synthesis of high performance organic semiconductor materials are the basis and premise of the wide application of OFET devices. In the past few decades, great progress has been made in developing organic semiconductors. Besides organic semiconducting materials, there are many other factors influencing the performance of OFETs including device configuration, processing technique, and other devices physical factors, etc. In the following, a brief review of the development of p-type, n-type, ambipolar organic semiconductors and their field-effect properties is given. The history, mechanism, configuration, and fabrication methods of OFET devices and main performance influencing factors of OFETs are also introduced.

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Simultaneous Modification of Bottom‐Contact Electrode and Dielectric Surfaces for Organic Thin‐Film Transistors Through Single‐Component Spin‐Cast Monolayers

Acton

Dubey

Weidner

et al. 2011

Adv Funct Materials

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An efficient process is developed by spin‐coating a single‐component, self‐assembled monolayer (SAM) to simultaneously modify the bottom‐contact electrode and dielectric surfaces of organic thin‐film transistors (OTFTs). This effi cient interface modifi cation is achieved using n‐alkyl phosphonic acid based SAMs to prime silver bottom‐contacts and hafnium oxide (HfO2) dielectrics in low‐voltage OTFTs. Surface characterization using near edge X‐ray absorption fi ne structure (NEXAFS) spectroscopy, X‐ray photoelectron spectroscopy (XPS), attenuated total reflectance Fourier transform infrared (ATR‐FTIR) spectroscopy, atomic force microscopy (AFM), and spectroscopic ellipsometry suggest this process yields structurally well‐defi ned phosphonate SAMs on both metal and oxide surfaces. Rational selection of the alkyl length of the SAM leads to greatly enhanced performance for both n‐channel (C60) and p‐channel (pentacene) based OTFTs. Specifi cally, SAMs of n‐octylphos‐phonic acid (OPA) provide both low‐contact resistance at the bottom‐contact electrodes and excellent interfacial properties for compact semiconductor grain growth with high carrier mobilities. OTFTs based on OPA modifi ed silver electrode/HfO2 dielectric bottom‐contact structures can be operated using < 3V with low contact resistance (down to 700 Ohm‐cm), low subthreshold swing (as low as 75 mV dec−1), high on/off current ratios of 107, and charge carrier mobilities as high as 4.6 and 0.8 cm2 V−1 s−1, for C60 and pentacene, respectively. These results demonstrate that this is a simple and efficient process for improving the performance of bottom‐contact OTFTs.

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Bottom-contact fullerene C60 thin-film transistors with high field-effect mobilities

Cited by 49 publications

References 16 publications

Gate-bias assisted charge injection in organic field-effect transistors

Gate-bias assisted charge injection in organic field-effect transistors

Organic Semiconductors for Field-Effect Transistors

Simultaneous Modification of Bottom‐Contact Electrode and Dielectric Surfaces for Organic Thin‐Film Transistors Through Single‐Component Spin‐Cast Monolayers

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