Boron vacancy: a strategy to boost the oxygen reduction reaction of hexagonal boron nitride nanosheet in hBN–MoS<sub>2</sub> heterostructure

Roy, Dipayan; Panigrahi, Karamjyoti; Das, Bikram Kumar; Ghorui, Uday Kumar; Bhattacharjee, Souvik; Samanta, Madhupriya; Sarkar, Sourav; Chattopadhyay, Kalyan Kumar

doi:10.1039/d1na00304f

Cited by 20 publications

(12 citation statements)

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“…The electronic structure of BN indicates the presence of boron vacancies on the basal plane that provide excellent charge transport pathways . Two peaks in the deconvoluted N 1s spectrum in Figure g were associated with N–B (398.8 eV) and N–H (∼400.5 eV).…”

Section: Resultsmentioning

confidence: 99%

Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications

Khot

Dongale

Nirmal

et al. 2022

ACS Appl. Mater. Interfaces

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Although two-dimensional (2D) nanomaterials are promising candidates for use in memory and synaptic devices owing to their unique physical, chemical, and electrical properties, the process compatibility, synthetic reliability, and cost-effectiveness of 2D materials must be enhanced. In this context, amorphous boron nitride (a-BN) has emerged as a potential material for future 2D nanoelectronics. Therefore, we explored the use of a-BN for multilevel resistive switching (MRS) and synaptic learning applications by fabricating a complementary metal-oxide-semiconductor (CMOS)-compatible Ag/a-BN/Pt memory device. The redox-active Ag and boron vacancies enhance the mixed electrochemical metallization and valence change conduction mechanism. The synthesized a-BN switching layer was characterized using several analyses. The fabricated memory devices exhibited bipolar resistive switching with low set and reset voltages (+0.8 and −2 V, respectively) and a small operating voltage distribution. In addition, the switching voltages of the device were modeled using a time-series analysis, for which the Holt’s exponential smoothing technique provided good modeling and prediction results. According to the analytical calculations, the fabricated Ag/a-BN/Pt device was found to be memristive, and its MRS ability was investigated by varying the compliance current. The multilevel states demonstrated a uniform resistance distribution with a high endurance of up to 104 direct current (DC) cycles and memory retention characteristics of over 106 s. Conductive atomic force microscopy was performed to clarify the resistive switching mechanism of the device, and the likely mixed electrochemical metallization and valence change mechanisms involved therein were discussed based on experimental results. The Ag/a-BN/Pt memristive devices mimicked potentiation/depression and spike-timing-dependent plasticity-based Hebbian-learning rules with a high pattern accuracy (90.8%) when implemented in neural network simulations.

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Section: Resultsmentioning

confidence: 99%

Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications

Khot

Dongale

Nirmal

et al. 2022

ACS Appl. Mater. Interfaces

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“…The possible reason is that VS 2 can increase the asymmetric spin density of sp 2 C in rGO and charge delocalization. Thus, the lower R ct and higher ECSA offer a higher density of accessible active sites on the hybrid catalyst, which enhances the synergistic effect between VS 2 and rGO for the superior ORR activity [55–57] . Tafel plots (Figure 5a) were also employed to assess their electrocatalytic activity.…”

Section: Resultsmentioning

confidence: 99%

“…Chronoamperometric analysis at a fixed potential of 0.65 V (Figure 6e) exhibits excellent durability of 98.1 % during 24 h for VS 2 /rGO with respect to the other two synthesized electrocatalysts and Pt/C (92.7 %, Figure S14). The improved LSV cycling stability and chronoamperometric durability of VS 2 /rGO electrode is attributed to the spin‐orbit coupling of V and S orbital states, forming strong synergistic interaction with rGO and making the electrocatalyst more stable and more active towards ORR [55] . The reason for the poor durability of Pt/C is likely due to agglomeration of Pt NPs on the amorphous surface of C support, which is highly corrosive in nature [50] .…”

Section: Resultsmentioning

confidence: 99%

“…The improved LSV cycling stability and chronoamperometric durability of VS 2 /rGO electrode is attributed to the spin-orbit coupling of V and S orbital states, forming strong synergistic interaction with rGO and making the electrocatalyst more stable and more active towards ORR. [55] The reason for the poor durability of Pt/C is likely due to agglomeration of Pt NPs on the amorphous surface of C support, which is highly corrosive in nature. [50] The structural morphology and chemical composition of the nanocomposite were investigated by XRD (Figure S20a), TEM (Figure S20b) and SEM (Figure S20d) analyses after 6000 CV cycles for the long-term ORR test.…”

Section: Durability Test For Orrmentioning

confidence: 99%

“…Thus, the lower R ct and higher ECSA offer a higher density of accessible active sites on the hybrid catalyst, which enhances the synergistic effect between VS 2 and rGO for the superior ORR activity. [55][56][57] Tafel plots (Figure 5a) were also employed to assess their electrocatalytic activity. The superior kinetics of VS 2 /rGO electrodes is reflected in its lowest Tafel slope (59.0 mV/dec).…”

Section: Probable Mechanism and Factors Affecting The Orr Activitymentioning

confidence: 99%

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Newly Designed One‐Pot In‐Situ Synthesis of VS₂/rGO Nanocomposite to Explore Its Electrochemical Behavior towards Oxygen Electrode Reactions**

et al. 2022

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A facile and effective one‐step in‐situ technique for the synthesis of layered two‐dimensional metallic vanadium sulfide‐reduced graphene oxide (VS2/rGO) nanocomposite (NComp) hasbeen described and their electrocatalytic properties towards oxygen reduction reaction (ORR) and oxygen evolution reaction (OER) have been studied. From transmission and scanning electron microscopy analyses, it was observed that the layered two‐dimensional VS2 nanoparticles successfully grew over the layered graphene matrix. The as‐synthesized NComp displayed excellent electrocatalytic activities towards ORR with a four‐electron transfer pathway, and OER in alkaline medium. The synthesized nanocatalyst exhibits lower ΔE value (0.75 V) as compared to other literature values, high catalytic current density (−6.26 mA cm−2 for ORR) with a lower Tafel slope (59 mV dec−1), as compared to Pt/C, and lower overpotential (η=0.31 V at 10 mA cm−2 for OER) with a smaller Tafel slope (68 mV dec−1) than those of RuO2. Moreover, it displays high electrochemically active surface area, long‐term stability in alkaline medium and good resistance to the methanol crossover effect. The enhanced bifunctional electrocatalytic properties of the synthesized nanocatalyst may be owing to the synergistic effect of combining VS2 and rGO, which improves the surface area, adsorption of reaction intermediates, active sites density, and electrical conductivity. Along with the high stability of the hybrid NComp, these advantages provide immense promise for triggering breakthroughs in fuel‐cell electrocatalysis.

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Advancements in Rechargeable Zn‐Air Batteries with Transition‐Metal Dichalcogenides as Bifunctional Electrocatalyst

Gupta,

Maurya,

Mishra

2024

ChemPlusChem

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Zinc‐air batteries are promising energy storage devices owing to their high energy density, low cost, and environmental friendliness. However, the development of durable and efficient bifunctional electrocatalysts is a major concern for Zn‐air batteries. In this review, we summarize the recent progress on transition metal dichalcogenides (TMDs) as bifunctional electrocatalysts for Zn‐air batteries. We discuss the advantages of TMDs, such as high activity, good stability, and tunable electronic structure, as well as the challenges, such as low conductivity, poor durability, and limited active sites. We also highlight the strategies for fine‐tuning the properties of TMDs, such as defect engineering, doping, hybridization, and structural engineering, to enhance their catalytic performance and stability. We provide a comprehensive and in‐depth analysis of the applications of TMDs in Zn‐air batteries, demonstrating their potential as low‐cost, abundant, and environmentally friendly alternatives to noble metal catalysts. We also suggest future directions like exploring new TMDs materials and compositions, developing novel synthesis and modification techniques, investigating the interfacial interactions and charge transfer processes, and integrating TMDs with other functional materials. This review aims to illuminate the path forward for the development of efficient and durable Zn‐air batteries, aligning with the broader objectives of sustainable energy solutions.

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Boron vacancy: a strategy to boost the oxygen reduction reaction of hexagonal boron nitride nanosheet in hBN–MoS₂ heterostructure

Abstract: Incorporation of vacancies in a system considered as proficient defect engineering in general catalytic modulation. Among the two-dimensional materials, surface active sites’ deficiency and high band gap restrict hexagonal boron...

Cited by 20 publications

References 49 publications

Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications

Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications

Newly Designed One‐Pot In‐Situ Synthesis of VS₂/rGO Nanocomposite to Explore Its Electrochemical Behavior towards Oxygen Electrode Reactions**

Advancements in Rechargeable Zn‐Air Batteries with Transition‐Metal Dichalcogenides as Bifunctional Electrocatalyst

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Boron vacancy: a strategy to boost the oxygen reduction reaction of hexagonal boron nitride nanosheet in hBN–MoS2 heterostructure

Abstract: Incorporation of vacancies in a system considered as proficient defect engineering in general catalytic modulation. Among the two-dimensional materials, surface active sites’ deficiency and high band gap restrict hexagonal boron...

Cited by 20 publications

References 49 publications

Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications

Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications

Newly Designed One‐Pot In‐Situ Synthesis of VS2/rGO Nanocomposite to Explore Its Electrochemical Behavior towards Oxygen Electrode Reactions**

Advancements in Rechargeable Zn‐Air Batteries with Transition‐Metal Dichalcogenides as Bifunctional Electrocatalyst

Contact Info

Product

Resources

About

Boron vacancy: a strategy to boost the oxygen reduction reaction of hexagonal boron nitride nanosheet in hBN–MoS₂ heterostructure

Newly Designed One‐Pot In‐Situ Synthesis of VS₂/rGO Nanocomposite to Explore Its Electrochemical Behavior towards Oxygen Electrode Reactions**