Boron-Silicon Film Chemical Vapor Deposition Using Boron Trichloride, Dichlorosilane and Monomethylsilane Gases

Muroi, Mitsuko; Otani, Mana; Habuka, Hitoshi

doi:10.1149/2162-8777/ac08d6

Cited by 7 publications

(4 citation statements)

References 28 publications

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“…Figure 11 shows a high resolution TEM image of the same film as that of showing a slightly different contrast from the substrate and the main body of the film, similar to a previous study [18]. Figure 11 simultaneously shows that there are no voids in the obtained film.…”

Section: Film Qualitysupporting

confidence: 70%

Boron-Silicon Thin Film Formation Using a Slim Vertical Chemical Vapor Deposition Reactor

Kamochi¹,

Motomiya²,

Habuka³

et al. 2023

ACES

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A boron-silicon film was formed from boron trichloride gas and dichlorosilane gas at about 900˚C in ambient hydrogen at atmospheric pressure utilizing a slim vertical cold wall chemical vapor deposition reactor designed for the Minimal Fab system. The gas flow rates were 80, 20 and 0.1 -20 sccm for the hydrogen, dichlorosilane and boron trichloride gases, respectively. The gas transport condition in the reactor was shown to quickly become stable when evaluated by quartz crystal microbalances at the inlet and outlet. The boron-silicon thin film was formed by achieving the various boron concentrations of 0.16% -80%, the depth profile of which was flat. By observing the cross-sectional TEM image, the obtained film was dense. The boron trichloride gas is expected to be useful for the quick fabrication of various materials containing boron at significantly low and high concentrations.

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Section: Film Qualitysupporting

confidence: 70%

Boron-Silicon Thin Film Formation Using a Slim Vertical Chemical Vapor Deposition Reactor

Kamochi¹,

Motomiya²,

Habuka³

et al. 2023

ACES

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“…The interaction of fluorouracil (FU) with the quasi-planar B 36 cluster was studied in 2017 [115] using the hybrid TPSSh functional with the 6-31 + G (d) basis set. The FU drug failed to generate any noticeable signal owing to the very weak interaction of this drug with the concave and convex surface of B 36 ranging from −2 to −5 kcal/ mol.…”

Section: Drug Delivery Applicationmentioning

confidence: 99%

“…Boron adsorption occurs at a temperature lower than 800°C, the deposition occurs at 900-1000°C, and at a temperature higher than 1000°C, they observe etching behavior due to chlorosilanes that occur in gaseous form. In their further research in 2021 [115], they reported using a similar boron gas source at 800°C. The etching does not occur on the surface based on the HRTEM result that demonstrated the dense film without void.…”

Section: Current Development Of Boron Cvd Dopingmentioning

confidence: 99%

Characteristics and Applications of Boron

2022

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He is a specialist in the development of smart sensors and intelligent systems for food, agricultural, and environmental applications. He has received thirty research awards such as the TRF-OHEC-SCOPUS Young Researcher Award in physical science, the Invention Award from the National Research Council of Thailand, the Highest Citation Award for a young researcher, and others. He has served as a reviewer, guest editor, and associate editor for several scientific journals. He was listed among the top 2% of scientists in electrical and electronic engineering in 2020 and 2021 by Stanford University, USA. He has published dozens of journal articles, proceedings, book chapters, patents, and copyrights.

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“…Additionally, this approach can regulate the thickness of Si easily. Silicon nanomembranes (SiNMs) [170] in 2D systems, silicon nanowires (SiNWs) [171] in 1D systems, and silicon nanoparticles [172] in 0D systems can be generated by a bottom-up approach. However, achieving precise manipulation of nanoscale components demands sophisticated techniques and equipment.…”

Section: Introductionmentioning

confidence: 99%

Novel fabrication techniques for ultra-thin silicon based flexible electronics

Lee,

Ju,

Lee

et al. 2024

Int. J. Extrem. Manuf.

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Flexible electronics offer a multitude of advantages, such as flexibility, lightweight properties, portability, and high durability. These unique properties allow for seamless applications to curved and soft surfaces, leading to extensive utilization across a wide range of fields in consumer electronics. These applications, for example, span integrated circuits, solar cells, batteries, wearable devices, bio-implants, soft robotics, and biomimetic applications. Recently, flexible electronic devices have been developed using a variety of materials such as organic, carbon-based, and inorganic semiconducting materials. Silicon (Si) owing to its mature fabrication process, excellent electrical, optical, thermal properties, and cost-efficiency, remains a compelling material choice for flexible electronics. Consequently, the research on ultra-thin Si in the context of flexible electronics is studied rigorously nowadays. The thinning of Si is crucially important for flexible electronics as it reduces its bending stiffness and the resultant bending strain, thereby enhancing flexibility while preserving its exceptional properties. This review provides a comprehensive overview of the recent efforts in the fabrication techniques for forming ultra-thin Si using top-down and bottom-up approaches and explores their utilization in flexible electronics and their applications.

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Boron-Silicon Film Chemical Vapor Deposition Using Boron Trichloride, Dichlorosilane and Monomethylsilane Gases

Cited by 7 publications

References 28 publications

Boron-Silicon Thin Film Formation Using a Slim Vertical Chemical Vapor Deposition Reactor

Boron-Silicon Thin Film Formation Using a Slim Vertical Chemical Vapor Deposition Reactor

Characteristics and Applications of Boron

Novel fabrication techniques for ultra-thin silicon based flexible electronics

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